Display device

ABSTRACT

A display device is provided. The display device includes a first substrate, a first element layer, a first light-emitting element layer, a second substrate, a second element layer, and a second light-emitting element layer. The first element layer is disposed on the first substrate and includes a first active element. The first light-emitting element layer is disposed on the first element layer and includes a first light-emitting element, the first light-emitting element is electrically connected to the first active element and includes a first light-emitting layer. The second substrate is disposed on the first light-emitting element. The second element layer is disposed on the second substrate and includes a second active element. The second light-emitting element layer is disposed on the second element layer and includes a second light-emitting element, the second light-emitting element is electrically connected to the second active element and includes a second light-emitting layer. The first light-emitting layer and the second light-emitting layer do not overlap with each other in the normal direction of the first substrate.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the priority benefit of Taiwan applicationserial no. 107141374, filed on Nov. 21, 2018. The entirety of theabove-mentioned patent application is hereby incorporated by referenceherein and made a part of this specification.

BACKGROUND Technical Field

The present invention relates to a display device, and more particularlyto a display device having a multi-layer substrate.

Description of Related Art

In recent years, due to the advantages of self-luminous, wide viewingangle, power saving, simple program, low cost, wide operatingtemperature, high response speed, and full-color display, the organiclight-emitting diode display has great potential to become themainstream of the next generation of flat panel displays. With thecontinuous advancement of display technology, the resolutionrequirements of organic light-emitting diode displays are increasing, sothat the image output can be visually closer to natural images.Therefore, how to improve the resolution of the organic light-emittingdiode display has become one of the problems to be solved at present.

SUMMARY

The present invention provides a display device having improvedresolution.

The display device of the present invention includes a first substrate,a first element layer, a first light-emitting element layer, a secondsubstrate, a second element layer, a second light-emitting elementlayer, a third substrate, a third element layer, and a thirdlight-emitting element layer. The first element layer is disposed on thefirst substrate and includes a first active element. The firstlight-emitting element layer is disposed on the first element layer,wherein the first light-emitting element layer includes a firstlight-emitting element electrically connected to the first activeelement and including a first light-emitting layer. The second substrateis disposed on the first light-emitting element. The second elementlayer is disposed on the second substrate and includes a second activeelement. The second light-emitting element layer is disposed on thesecond element layer, wherein the second light-emitting element layerincludes a second light-emitting element electrically connected to thesecond active element and including the second light-emitting layer. Thethird substrate is disposed on the second light-emitting element. Thethird element layer is disposed on the third substrate and includes athird active element. The third light-emitting element layer is disposedon the third element layer, wherein the third light-emitting elementlayer includes a third light-emitting element electrically connected tothe third active element and including a third light-emitting layer. Thefirst light-emitting layer, the second light-emitting layer and thethird light-emitting layer do not overlap with each other in a normaldirection of the first substrate.

Based on the above, in the display device of the present invention, thefirst element layer is disposed on the first substrate and includes thefirst active element, the first light-emitting element layer is disposedon the first element layer and includes the first light-emitting elementelectrically connected to the first active element, the second substrateis disposed on the first light-emitting element, the second elementlayer is disposed on the second substrate and includes the second activeelement, the second light-emitting element layer is disposed on thesecond element layer and includes the second light-emitting elementelectrically connected to the second active element, the third substrateis disposed on the second light-emitting element, the third elementlayer is disposed on the third substrate and includes the third activeelement, the third light-emitting element layer is disposed on the thirdelement layer and includes the third light-emitting element electricallyconnected to the third active element, and the first light-emittinglayer of the first light-emitting element, the second light-emittinglayer of the second light-emitting element and the third light-emittinglayer of the third light-emitting element do not overlap with each otherin the normal direction of the first substrate, whereby the displaydevice may have improved resolution.

In order to make the aforementioned features and advantages of thedisclosure more comprehensible, embodiments accompanied with figures aredescribed in detail below.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the invention, and are incorporated in and constitute apart of this specification. The drawings illustrate embodiments of theinvention and, together with the description, serve to explain theprinciples of the invention.

FIG. 1 is a schematic cross-sectional view of a display device inaccordance with an embodiment of the present invention.

FIG. 2 is a schematic diagram of driving waveforms of the display deviceof FIG. 1.

FIG. 3 is a schematic cross-sectional view of a display device inaccordance with another embodiment of the present invention.

FIG. 4 is a schematic cross-sectional view of a display device inaccordance with another embodiment of the present invention.

FIG. 5 is a schematic diagram of driving waveforms of the display deviceof FIG. 4.

FIG. 6 is a schematic cross-sectional view of a display device inaccordance with another embodiment of the present invention.

FIG. 7 is a schematic cross-sectional view of a display device inaccordance with another embodiment of the present invention.

FIG. 8 is a schematic cross-sectional view of a display device inaccordance with another embodiment of the present invention.

DESCRIPTION OF THE EMBODIMENTS

In the present specification, a range represented by “a numerical valueto another numerical value” is a schematic representation for avoidinglisting all of the numerical values in the range in the specification.Therefore, the recitation of a specific numerical range covers anynumerical value in the numerical range and a smaller numerical rangedefined by any numerical value in the numerical range, as is the casewith the any numerical value and the smaller numerical range statedexplicitly in the specification.

It should be understood that, although the terms “first”, “second”,“third”, etc., may be used herein to describe various elements,components, regions, layers, sections and/or colors, these elements,components, regions, layers, sections and/or colors should not belimited by these terms. These terms are used to distinguish one element,component, region, layer, section or color from another element,component, region, layer, section or color.

In the figures, for clarity, the thicknesses of, for instance, layers,films, panels, and regions are enlarged. It should be understood that,when a layer, film, region, or an element of a substrate is “on” anotherelement or “connected to” another element, the element may be directlyon the other element or connected to the other element, or anintermediate element may be present. On the other hand, when an elementis “directly on another element” or “directly connected to” anotherelement, an intermediate element is not present. As used in the presentspecification, “connected to” may refer to a physical and/or electricalconnection. Furthermore, “electrically connected” may mean that otherelements are present between two elements.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood bypersons of ordinary skill in the art. It will be further understood thatterms, such as those defined in commonly used dictionaries, should beinterpreted as having a meaning that is consistent with their meaning inthe context of the relevant art and the disclosure and will not beinterpreted in an idealized or overly formal sense unless expressly sodefined herein.

FIG. 1 is a schematic cross-sectional view of a display device inaccordance with an embodiment of the present invention. FIG. 2 is aschematic diagram of driving waveforms of the display device of FIG. 1.

Referring to FIG. 1, a display device 10 may include a first substrate100, a first element layer 102, a first light-emitting element layer104, a second substrate 110, a second element layer 112, a secondlight-emitting element layer 114, a third substrate 120, a third elementlayer 122 and a third light-emitting element layer 124. In addition, inthe present embodiment, the display device 10 may selectively include afourth substrate 130, a fourth element layer 132, a fourthlight-emitting element layer 134, and adhesive layers 140 a to 140 c.

In this embodiment, the material of the first substrate 100 may include,but not limited to, glass, quartz, silicon oxide, silicon nitride,silicon oxynitride or an organic polymer, the organic polymer includes,for example, polyimide resin, epoxy resin or acrylic resin. In thepresent embodiment, the first substrate 100 has a single layerstructure, but the present invention is not limited thereto. In otherembodiments, the first substrate 100 may have a multilayer structure.

In the present embodiment, the first element layer 102 is disposed onthe first substrate 100. In the present embodiment, the first elementlayer 102 may include a first active element T1, a gate insulating layerGI, an interlayer insulating layer IL1 an interlayer insulating layerIL2, and a planarization layer PL.

In this embodiment, the first active element T1 may include asemiconductor layer SC1, a gate G1, a source S1, and a drain D1. Thesemiconductor layer SC1 may include a source region SR1, a drain regionDR1, and a channel region CR1. The gate G1 is located above the channelregion CR1 and overlaps the channel region CR1, the source S1 iselectrically connected to the source region SR1 via a contact window H1formed in the gate insulating layer GI (described later in detail) andthe interlayer insulating layer IL1 (described in detail later), and thedrain D1 is electrically connected to the drain region DR1 via a contactwindow H2 formed in the gate insulating layer GI (described later indetail) and the interlayer insulating layer IL1 (described in detaillater).

In the present embodiment, the first active element T1 belongs to thetop gate type thin film transistor, but the present invention is notlimited thereto. In other embodiments, the first active element T1 maybelong to the bottom gate type thin film transistor.

In the present embodiment, the material of the gate G1, the source S1,and the drain D1 may include, but not limited to, metal, an alloy, anitride of the foregoing material, an oxide of the foregoing material,an oxynitride of the foregoing material, other non-metallic materialswith conductive properties, or other suitable materials. In the presentembodiment, the material of the semiconductor layer SC1 may include apolysilicon, that is, the first active element T1 may be a lowtemperature poly-silicon thin film transistor (LTPS TFT). However, theinvention does not limit the type of active elements. In otherembodiments, the material of the semiconductor layer SC1 may includeamorphous silicon, microcrystalline silicon, nanocrystalline silicon,single crystal silicon, organic semiconductor material, metal oxidesemiconductor material, carbon nanotube/rod, perovskite or othersuitable materials.

In the present embodiment, the gate insulating layer GI covers thesemiconductor layer SC1. In the present embodiment, the interlayerinsulating layer IL1 is disposed on the gate insulating layer GI andcovers the gate G1. In the present embodiment, the interlayer insulatinglayer IL2 is disposed on the interlayer insulating layer IL1 and coversthe first active element T1 to provide insulation and protectionfunctions. In the present embodiment, the planarization layer PL isdisposed on the interlayer insulating layer IL2 to provide protectionfunction and ensure planarization. In the present embodiment, the gateinsulating layer GI, the interlayer insulating layer IL1 the interlayerinsulating layer IL2, and the planarization layer PL may each have asingle layer structure or a multilayer structure. In the presentembodiment, the materials of the gate insulating layer GI, theinterlayer insulating layer IL1 the interlayer insulating layer IL2, andthe planarization layer PL may respectively include an inorganicmaterial, an organic material, or other suitable materials, wherein theinorganic material includes, for example, but not limited to: siliconoxide, silicon nitride or silicon oxynitride; the organic materialincludes, for example, but not limited to: polyimide resin, epoxy resinor acrylic resin.

In the present embodiment, the first light-emitting element layer 104 isdisposed on the first element layer 102. In the present embodiment, thefirst light-emitting element layer 104 may include an electrode A1, afirst light-emitting layer E1, an electrode C1, and a pixel definitionlayer PDL1.

In the present embodiment, the electrode A1 is electrically connected tothe drain D1 of the first active element T1 through a contact window H3formed in the interlayer insulating layer IL2 and the planarizationlayer PL. In this embodiment, the material of the electrode A1 may be atransparent conductive material or an opaque conductive material. Thetransparent conductive material may include a metal oxide conductivematerial such as indium tin oxide, indium zinc oxide, aluminum tinoxide, aluminum zinc oxide, indium gallium zinc oxide, other suitableoxides, or stacked layers of at least two of the above materials. Theopaque conductive material may include a metallic material such asaluminum, magnesium, titanium or alloys thereof.

In the present embodiment, the first light-emitting layer E1 is locatedwithin a opening V1 of the pixel definition layer PDL1, but the presentinvention is not limited thereto. In other embodiments, the firstlight-emitting layer E1 may be located within the opening V1 of thepixel definition layer PDL1 and on the pixel definition layer PDL1. Inthe present embodiment, the color of the first light-emitting layer E1is a first blue color. In the present embodiment, the firstlight-emitting layer E1 may be composed of any material known to thoseskilled in the art for the light-emitting layer in the display panel.

In the present embodiment, the electrode C1 is disposed on the firstlight-emitting layer E1. In the present embodiment, the firstlight-emitting layer E1 is disposed between the electrode A1 and theelectrode C1. In this embodiment, the material of the electrode C1 maybe a transparent conductive material or an opaque conductive material.The transparent conductive material may include a metal oxide conductivematerial such as indium tin oxide, indium zinc oxide, aluminum tinoxide, aluminum zinc oxide, indium antimony zinc oxide, other suitableoxides, or stacked layers of at least two of the above materials. Theopaque conductive material may include a metallic material such asaluminum, magnesium, titanium or alloys thereof.

In the present embodiment, the first light-emitting layer E1, theportion of the electrode A1 overlapping with the first light-emittinglayer E1, and the portion of the electrode C1 overlapping with the firstlight-emitting layer E1 constitute the first light-emitting element O1.In the present embodiment, the portion of the electrode A1 overlappingwith the first light-emitting layer E1 serves as an anode of the firstlight-emitting element O1, and the portion of the electrode C1overlapping with the first light-emitting layer E1 serves as a cathodeof the first light-emitting element O1, but the present invention is notlimited thereto. In other embodiments, the portion of the electrode A1overlapping the first light-emitting layer E1 may serve as a cathode ofthe first light-emitting element O1, and the portion of the electrode C1overlapping the first light-emitting layer E1 may serve as an anode ofthe first light-emitting element O1.

As described above, in the present embodiment, the electrode A1 iselectrically connected to the drain D1 of the first active element T1,so that the first active element T1 is electrically connected to thefirst light-emitting element O1 for driving the first light-emittingelement O1. Specifically, the first light-emitting element O1 emitslight by driving the first light-emitting layer E1 through the voltagedifference generated between the electrode A1 and the electrode C1. Asdescribed above, the color of the first light-emitting layer E1 is thefirst blue color, so that the first light-emitting element O1 is drivento emit a first blue light I1.

In addition, although FIG. 1 only shows one first active element T1electrically connected to the first light-emitting element O1, it shouldbe understood by those of ordinary skill in the art that the firstlight-emitting element O1 is actually driven by, for example, a drivingunit having a 1T1C architecture, a 2T1C architecture, a 3T1Carchitecture, a 3T2C architecture, a 4T1C architecture, a 4T2Carchitecture, a 5T1C architecture, a 5T2C architecture, a 6T1Carchitecture, a 6T2C architecture, a 7T2C architecture or any possiblearchitecture. That is, in the present embodiment, the first activeelement T1 is one element in the driving unit for driving the firstlight-emitting element O1.

In the present embodiment, the material of the pixel definition layerPDL1 may include a photosensitive polyimide material, a propylene-basedmaterial, a siloxane material, a phenolic resin material, an oxide, anitride or an oxynitride, but the present invention is not limitedthereto.

In the present embodiment, the fourth substrate 130 is disposed on thefirst light-emitting element layer 104. That is, in the presentembodiment, the fourth substrate 130 is stacked on the first substrate100, the first element layer 102, and the first light-emitting elementlayer 104 in the normal direction N of the first substrate 100. In thisembodiment, the material of the fourth substrate 130 may include, butnot limited to, glass, quartz, silicon oxide, silicon nitride, siliconoxynitride or an organic polymer, the organic polymer includes, forexample, polyimide resin, epoxy resin or acrylic resin. In the presentembodiment, the fourth substrate 130 has a single layer structure, butthe present invention is not limited thereto. In other embodiments, thefourth substrate 130 may have a multilayer structure.

In the present embodiment, the fourth element layer 132 is disposed onthe fourth substrate 130. In the present embodiment, the fourth elementlayer 132 may include a fourth active element T4, a gate insulatinglayer GI4, an interlayer insulating layer IL3, an interlayer insulatinglayer IL4, and a planarization layer PL4.

In this embodiment, the fourth active element T4 may include asemiconductor layer SC4, a gate G4, a source S4, and a drain D4. Thesemiconductor layer SC4 may include a source region SR4, a drain regionDR4, and a channel region CR4. The gate G4 is located above the channelregion CR4 and overlaps the channel region CR4, and the source S4 iselectrically connected to the source region SR4 via a contact window H4formed in the gate insulating layer GI4 (described later in detail) andthe interlayer insulating layer IL3 (described in detail later), and thedrain D4 is electrically connected to the drain region DR4 via a contactwindow H5 formed in the gate insulating layer GI4 (described later indetail) and the interlayer insulating layer IL3 (described in detaillater).

In the present embodiment, the fourth active element T4 belongs to thetop gate type thin film transistor, but the present invention is notlimited thereto. In other embodiments, the fourth active element T4 maybelong to the bottom gate type thin film transistor.

In the present embodiment, the material of the gate G4, the source S4,and the drain D4 may include, but not limited to, metal, an alloy, anitride of the foregoing material, an oxide of the foregoing material,an oxynitride of the foregoing material, other non-metallic materialswith conductive properties, or other suitable materials. In thisembodiment, the material of the semiconductor layer SC4 may includepolysilicon, that is, the fourth active element T4 may be a lowtemperature poly-silicon thin film transistor (LIPS TFT). However, theinvention does not limit the type of active elements. In otherembodiments, the material of the semiconductor layer SC4 may includeamorphous silicon, microcrystalline silicon, nanocrystalline silicon,single crystal silicon, organic semiconductor material, metal oxidesemiconductor material, carbon nanotube/rod, perovskite or othersuitable materials.

In the present embodiment, the gate insulating layer GI4 covers thesemiconductor layer SC4. In the present embodiment, the interlayerinsulating layer IL3 is disposed on the gate insulating layer GI4 andcovers the gate G4. In the present embodiment, the interlayer insulatinglayer IL4 is disposed on the interlayer insulating layer IL3 and coversthe fourth active element T4 to provide insulation and protectionfunctions. In the present embodiment, the planarization layer PL4 isdisposed on the interlayer insulating layer IL4 to provide protectionfunction and ensure planarization. In the present embodiment, the gateinsulating layer GI4, the interlayer insulating layer IL3, theinterlayer insulating layer IL4, and the planarization layer PL4 mayeach have a single layer structure or a multilayer structure. In thepresent embodiment, the materials of the gate insulating layer GI4, theinterlayer insulating layer IL3, the interlayer insulating layer IL4,and the planarization layer PL4 may respectively include an inorganicmaterial, an organic material, or other suitable materials, wherein theinorganic material includes, for example, but not limited to: siliconoxide, silicon nitride or silicon oxynitride; the organic materialincludes, for example, but not limited to: polyimide resin, epoxy resinor acrylic resin.

In the present embodiment, the fourth light-emitting element layer 134is disposed on the fourth element layer 132. In the present embodiment,the fourth light-emitting element layer 134 may include an electrode A4,a fourth light-emitting layer E4, an electrode C4, and a pixeldefinition layer PDL4.

In the present embodiment, the electrode A4 is electrically connected tothe drain D4 of the fourth active element T4 through a contact window H6formed in the interlayer insulating layer IL4 and the planarizationlayer PL4. In this embodiment, the material of the electrode A4 may be atransparent conductive material or an opaque conductive material. Thetransparent conductive material may include a metal oxide conductivematerial such as indium tin oxide, indium zinc oxide, aluminum tinoxide, aluminum zinc oxide, indium gallium zinc oxide, other suitableoxides, or stacked layers of at least two of the above materials. Theopaque conductive material may include a metallic material such asaluminum, magnesium, titanium or alloys thereof.

In the present embodiment, the fourth light-emitting layer E4 is locatedwithin a opening V4 of the pixel definition layer PDL4, but the presentinvention is not limited thereto. In other embodiments, the fourthlight-emitting layer E4 may be located within the opening V4 of thepixel definition layer PDL4 and on the pixel definition layer PDL4. Inthe present embodiment, the fourth light-emitting layer E4 does notoverlap the first light-emitting layer E1 in the normal direction N ofthe first substrate 100. That is, in the present embodiment, the openingV4 of the pixel definition layer PDL4 does not overlap the opening V1 ofthe pixel definition layer PDL1 in the normal direction N of the firstsubstrate 100.

In the present embodiment, the color of the fourth light-emitting layerE4 is a second blue color. It should be noted that in the presentembodiment, the chromaticity of the second blue color of the fourthlight-emitting layer E4 is different from the chromaticity of the firstblue color of the first light-emitting layer E1. That is, in the presentembodiment, the material of the fourth light-emitting layer E4 isdifferent from the material of the first light-emitting layer E1. Forexample, in an embodiment, the chromaticity of the first blue color ofthe first light-emitting layer E1 is higher than the chromaticity of thesecond blue color of the fourth light-emitting layer E4, and thelifetime of the first light-emitting layer E1 is lower than the lifetimeof the fourth light-emitting layer E4. Further, in the presentembodiment, the fourth light-emitting layer E4 may be composed of anymaterial known to those skilled in the art for a light-emitting layer ina display panel.

In the present embodiment, the electrode C4 is disposed on the fourthlight-emitting layer E4. In the present embodiment, the fourthlight-emitting layer E4 is disposed between the electrode A4 and theelectrode C4. In this embodiment, the material of the electrode C4 maybe a transparent conductive material or an opaque conductive material.The transparent conductive material may include a metal oxide conductivematerial such as indium tin oxide, indium zinc oxide, aluminum tinoxide, aluminum zinc oxide, indium antimony zinc oxide, other suitableoxides, or stacked layers of at least two of the above materials. Theopaque conductive material may include a metallic material such asaluminum, magnesium, titanium or alloys thereof.

In the present embodiment, the fourth light-emitting layer E4, theportion of the electrode A4 overlapping with the fourth light-emittinglayer E4, and the portion of the electrode C4 overlapping with thefourth light-emitting layer E4 constitute the fourth light-emittingelement O4. In the present embodiment, the portion of the electrode A4overlapping with the fourth light-emitting layer E4 serves as an anodeof the fourth light-emitting element O4, and the portion of theelectrode C4 overlapping with the fourth light-emitting layer E4 servesas a cathode of the fourth light-emitting element O4, but the presentinvention is not limited thereto. In other embodiments, the portion ofthe electrode A4 overlapping with the fourth light-emitting layer E4 mayserve as a cathode of the fourth light-emitting element O4, and theportion of the electrode C4 overlapping with the fourth light-emittinglayer E4 may serve as an anode of the fourth light-emitting element O4.

As described above, in the present embodiment, the electrode A4 iselectrically connected to the drain D4 of the fourth active element T4,so that the fourth active element T4 is electrically connected to thefourth light-emitting element O4 for driving the fourth light-emittingelement O4. Specifically, the fourth light-emitting element O4 emitslight by driving the fourth light-emitting layer E4 through the voltagedifference generated between the electrode A4 and the electrode C4. Asdescribed above, the color of the fourth light-emitting layer E4 is thesecond blue color, so that the fourth light-emitting element O4 isdriven to emit a second blue light I4, wherein the first blue light I1emitted by the first light-emitting element O1 is different from thesecond blue light I4 emitted by the fourth light-emitting element O4.

In addition, although FIG. 1 only shows a fourth active element T4electrically connected to the fourth light-emitting element O4, itshould be understood by those of ordinary skill in the art that thefourth light-emitting element O4 is actually driven by, for example, adriving unit having a 1T1C architecture, a 2T1C architecture, a 3T1Carchitecture, a 3T2C architecture, a 4T1C architecture, a 4T2Carchitecture, a 5T1C architecture, a 5T2C architecture, a 6T1Carchitecture, a 6T2C architecture, a 7T2C architecture or any possiblearchitecture. That is, in the present embodiment, the fourth activeelement T4 is one element in the driving unit for driving the fourthlight-emitting element O4.

In the present embodiment, the material of the pixel definition layerPDL4 may include a photosensitive polyimide material, a propylene-basedmaterial, a siloxane material, a phenolic resin material, an oxide, anitride or an oxynitride, but the present invention is not limitedthereto.

In the present embodiment, the adhesive layer 140 a is disposed betweenthe first light-emitting element layer 104 and the fourth substrate 130.That is, in the present embodiment, the fourth substrate 130 is adheredand fixed to the first light-emitting element layer 104 through theadhesive layer 140 a. In addition, in the embodiment, the adhesive layer140 a may be a continuous adhesive layer, wherein the material of theadhesive layer may include, but not limited to, a photo-curable adhesive(SVR), an optical clear adhesive (OCA) or other adhesive materials.

In the present embodiment, the second substrate 110 is disposed on thefourth light-emitting element layer 134. That is, in the presentembodiment, the second substrate 110 is stacked on the first substrate100, the first element layer 102, the first light-emitting element layer104, the fourth substrate 130, the fourth element layer 132 and thefourth light-emitting element layer 134 in the normal direction N of thefirst substrate 100. From another point of view, in the presentembodiment, the fourth substrate 130, the fourth element layer 132, andthe fourth light-emitting element layer 134 are located between thefirst light-emitting element layer 104 and the second substrate 110. Inaddition, in this embodiment, the material of the second substrate 110may include, but not limited to, glass, quartz, silicon oxide, siliconnitride, silicon oxynitride or an organic polymer, the organic polymerincludes, for example, polyimide resin, epoxy resin or acrylic resin. Inthe present embodiment, the second substrate 110 has a single layerstructure, but the present invention is not limited thereto. In otherembodiments, the second substrate 110 may have a multilayer structure.

In the present embodiment, the second element layer 112 is disposed onthe second substrate 110. In the present embodiment, the second elementlayer 112 may include a second active element T2, a gate insulatinglayer GI2, an interlayer insulating layer IL5, an interlayer insulatinglayer IL6, and a planarization layer PL2.

In this embodiment, the second active element T2 may include asemiconductor layer SC2, a gate G2, a source S2, and a drain D2. Thesemiconductor layer SC2 may include a source region SR2, a drain regionDR2, and a channel region CR2. The gate G2 is located above the channelregion CR2 and overlaps the channel region CR2, and the source S2 iselectrically connected to the source region SR2 via a contact window H7formed in the gate insulating layer GI2 (described later in detail) andthe interlayer insulating layer IL5 (described in detail later), and thedrain D2 is electrically connected to the drain region DR2 via a contactwindow H8 formed in the gate insulating layer GI2 (described later indetail) and the interlayer insulating layer IL5 (described in detaillater).

In the present embodiment, the second active element T2 belongs to thetop gate type thin film transistor, but the present invention is notlimited thereto. In other embodiments, the second active element T2 maybelong to the bottom gate type thin film transistor.

In the present embodiment, the material of the gate G2, the source S2,and the drain D2 may include, but not limited to, metal, an alloy, anitride of the foregoing material, an oxide of the foregoing material,an oxynitride of the foregoing material, other non-metallic materialswith conductive properties, or other suitable materials. In thisembodiment, the material of the semiconductor layer SC2 may includepolysilicon, that is, the second active element T2 may be a lowtemperature poly-silicon thin film transistor. However, the inventiondoes not limit the type of active elements. In other embodiments, thematerial of the semiconductor layer SC2 may include amorphous silicon,microcrystalline silicon, nanocrystalline silicon, single crystalsilicon, organic semiconductor material, metal oxide semiconductormaterial, carbon nanotube/rod, perovskite or other suitable materials.

In the present embodiment, the gate insulating layer GI2 covers thesemiconductor layer SC2. In the present embodiment, the interlayerinsulating layer IL5 is disposed on the gate insulating layer GI2 andcovers the gate G2. In the present embodiment, the interlayer insulatinglayer IL6 is disposed on the interlayer insulating layer IL5 and coversthe second active element T2 to provide insulation and protectionfunctions. In the present embodiment, the planarization layer PL2 isdisposed on the interlayer insulating layer IL6 to provide protectionfunction and ensure planarization. In the present embodiment, the gateinsulating layer GI2, the interlayer insulating layer IL5, theinterlayer insulating layer IL6, and the planarization layer PL2 mayeach have a single layer structure or a multilayer structure. In thepresent embodiment, the materials of the gate insulating layer GI2, theinterlayer insulating layer IL5, the interlayer insulating layer IL6,and the planarization layer PL2 may respectively include an inorganicmaterial, an organic material, or other suitable materials, wherein theinorganic material includes, for example, but not limited to: siliconoxide, silicon nitride or silicon oxynitride; the organic materialincludes, for example, but not limited to: polyimide resin, epoxy resinor acrylic resin.

In the present embodiment, the second light-emitting element layer 114is disposed on the second element layer 112. In the present embodiment,the second light-emitting element layer 114 may include an electrode A2,a second light-emitting layer E2, an electrode C2, and a pixeldefinition layer PDL2.

In the present embodiment, the electrode A2 is electrically connected tothe drain D2 of the second active element T2 through a contact window H9formed in the interlayer insulating layer IL6 and the planarizationlayer PL2. In this embodiment, the material of the electrode A2 may be atransparent conductive material or an opaque conductive material. Thetransparent conductive material may include a metal oxide conductivematerial such as indium tin oxide, indium zinc oxide, aluminum tinoxide, aluminum zinc oxide, indium gallium zinc oxide, other suitableoxides, or stacked layers of at least two of the above materials. Theopaque conductive material may include a metallic material such asaluminum, magnesium, titanium or alloys thereof.

In the present embodiment, the second light-emitting layer E2 is locatedwithin a opening V2 of the pixel definition layer PDL2, but the presentinvention is not limited thereto. In other embodiments, the secondlight-emitting layer E2 may be located within the opening V2 of thepixel definition layer PDL2 and on the pixel definition layer PDL2. Inthe present embodiment, the second light-emitting layer E2, the fourthlight-emitting layer E4 and the first light-emitting layer E1 do notoverlap with each other in the normal direction N of the first substrate100. That is, in the present embodiment, in the normal direction N ofthe first substrate 100, the opening V2 of the pixel definition layerPDL2, the opening V4 of the pixel definition layer PDL4, and the openingV1 of the pixel definition layer PDL1 do not overlap with each other. Inthe present embodiment, the color of the second light-emitting layer E2is a green color. In the present embodiment, the second light-emittinglayer E2 may be composed of any material known to those skilled in theart for the light-emitting layer in the display panel.

In the present embodiment, the electrode C2 is disposed on the secondlight-emitting layer E2. In the present embodiment, the secondlight-emitting layer E2 is disposed between the electrode A2 and theelectrode C2. In this embodiment, the material of the electrode C2 maybe a transparent conductive material or an opaque conductive material.The transparent conductive material may include a metal oxide conductivematerial such as indium tin oxide, indium zinc oxide, aluminum tinoxide, aluminum zinc oxide, indium antimony zinc oxide, other suitableoxides, or stacked layers of at least two of the above materials. Theopaque conductive material may include a metallic material such asaluminum, magnesium, titanium or alloys thereof.

In the present embodiment, the second light-emitting layer E2, theportion of the electrode A2 overlapping with the second light-emittinglayer E2, and the portion of the electrode C2 overlapping with thesecond light-emitting layer E2 constitute the second light-emittingelement O2. In the present embodiment, the portion of the electrode A2overlapping with the second light-emitting layer E2 serves as an anodeof the second light-emitting element O2, and the portion of theelectrode C2 overlapping with the second light-emitting layer E2 servesas a cathode of the second light-emitting element O2, but the presentinvention is not limited thereto. In other embodiments, the portion ofthe electrode A2 overlapping with the second light-emitting layer E2 mayserve as a cathode of the second light-emitting element O2, and theportion of the electrode C2 overlapping with the second light-emittinglayer E2 may serve as an anode of the second light-emitting element O2.

As described above, in the present embodiment, the electrode A2 iselectrically connected to the drain D2 of the second active element T2,so that the second active element T2 is electrically connected to thesecond light-emitting element O2 for driving the second light-emittingelement O2. Specifically, the second light-emitting element O2 emitslight by driving the second light-emitting layer E2 through the voltagedifference generated between the electrode A2 and the electrode C2. Asdescribed above, the color of the second light-emitting layer E2 is thegreen color, so that the second light-emitting element O2 is driven toemit a green light I2.

In addition, although FIG. 1 only shows one second active element T2electrically connected to the second light-emitting element O2, itshould be understood by those of ordinary skill in the art that thesecond light-emitting element O2 is actually driven by, for example, adriving unit having a 1T1C architecture, a 2T1C architecture, a 3T1Carchitecture, a 3T2C architecture, a 4T1C architecture, a 4T2Carchitecture, a 5T1C architecture, a 5T2C architecture, a 6T1Carchitecture, a 6T2C architecture, a 7T2C architecture or any possiblearchitecture. That is, in the present embodiment, the second activeelement T2 is one element in the driving unit for driving the secondlight-emitting element O2.

In the present embodiment, the material of the pixel definition layerPDL2 may include a photosensitive polyimide material, a propylene-basedmaterial, a siloxane material, a phenolic resin material, an oxide, anitride or an oxynitride, but the present invention is not limitedthereto.

In the present embodiment, the adhesive layer 140 b is disposed betweenthe fourth light-emitting element layer 134 and the second substrate110. That is, in the present embodiment, the second substrate 110 isadhered and fixed to the fourth light-emitting element layer 134 throughthe adhesive layer 140 b. In addition, in the embodiment, the adhesivelayer 140 b may be a continuous adhesive layer, wherein the material ofthe adhesive layer may include, but not limited to, a photo-curableadhesive, an optical clear adhesive or other adhesive materials.

In the present embodiment, the third substrate 120 is disposed on thesecond light-emitting element layer 114. That is, in the presentembodiment, the third substrate 120 is stacked on the first substrate100, the first element layer 102, the first light-emitting element layer104, the fourth substrate 130, the fourth element layer 132, the fourthlight-emitting element layer 134, the second substrate 110, the secondelement layer 112, and the second light-emitting element layer 114 inthe normal direction N of the first substrate 100. From another point ofview, in the present embodiment, the second substrate 110, the secondelement layer 112, and the second light-emitting element layer 114 arelocated between the fourth light-emitting element layer 134 and thethird substrate 120. In addition, in the present embodiment, thematerial of the third substrate 120 may include, but not limited to,glass, quartz, silicon oxide, silicon nitride, silicon oxynitride or anorganic polymer, the organic polymer includes, for example, polyimideresin, an epoxy resin or an acrylic resin. In the present embodiment,the third substrate 120 has a single layer structure, but the presentinvention is not limited thereto. In other embodiments, the thirdsubstrate 120 may have a multilayer structure.

In the present embodiment, the third element layer 122 is disposed onthe third substrate 120. In the present embodiment, the third elementlayer 122 may include a third active element T3, a gate insulating layerGI3, an interlayer insulating layer IL7, an interlayer insulating layerIL8, and a planarization layer PL3.

In this embodiment, the third active element T3 may include asemiconductor layer SC3, a gate G3, a source S3, and a drain D3. Thesemiconductor layer SC3 may include a source region SR3, a drain regionDR3, and a channel region CR3. The gate G3 is located above the channelregion CR3 and overlaps the channel region CR3, and the source S3 iselectrically connected to the source region SR3 via a contact window H10formed in the gate insulating layer GI3 (described later in detail) andthe interlayer insulating layer IL7 (described in detail later), and thedrain D3 is electrically connected to the drain region DR3 via a contactwindow H11 formed in the gate insulating layer GI3 (described later indetail) and the interlayer insulating layer IL7 (described in detaillater).

In the present embodiment, the third active element T3 belongs to thetop gate type thin film transistor, but the present invention is notlimited thereto. In other embodiments, the third active element T3 maybelong to the bottom gate type thin film transistor.

In the present embodiment, the material of the gate G3, the source S3,and the drain D3 may include, but not limited to, metal, an alloy, anitride of the foregoing material, an oxide of the foregoing material,an oxynitride of the foregoing material, other non-metallic materialswith conductive properties, or other suitable materials. In thisembodiment, the material of the semiconductor layer SC3 may includepolysilicon, that is, the third active element T3 may be a lowtemperature poly-silicon thin film transistor. However, the inventiondoes not limit the type of active elements. In other embodiments, thematerial of the semiconductor layer SC3 may include amorphous silicon,microcrystalline silicon, nanocrystalline silicon, single crystalsilicon, organic semiconductor material, metal oxide semiconductormaterial, carbon nanotube/rod, perovskite or other suitable materials.

In the present embodiment, the gate insulating layer GI3 covers thesemiconductor layer SC3. In the present embodiment, the interlayerinsulating layer IL7 is disposed on the gate insulating layer GI3 andcovers the gate G3. In the present embodiment, the interlayer insulatinglayer IL8 is disposed on the interlayer insulating layer IL7 and coversthe third active element T3 to provide insulation and protectionfunctions. In the present embodiment, the planarization layer PL3 isdisposed on the interlayer insulating layer IL8 to provide protectionfunction and ensure planarization. In the present embodiment, the gateinsulating layer GI3, the interlayer insulating layer IL7, theinterlayer insulating layer IL8, and the planarization layer PL3 mayeach have a single layer structure or a multilayer structure. In thepresent embodiment, the materials of the gate insulating layer GI3, theinterlayer insulating layer IL7, the interlayer insulating layer IL8,and the planarization layer PL3 may respectively include an inorganicmaterial, an organic material, or other suitable materials, wherein theinorganic material includes, for example, but not limited to: siliconoxide, silicon nitride or silicon oxynitride; the organic materialincludes, for example, but not limited to: polyimide resin, epoxy resinor acrylic resin.

In the present embodiment, the third light-emitting element layer 124 isdisposed on the third element layer 122. In the present embodiment, thethird light-emitting element layer 124 may include an electrode A3, athird light-emitting layer E3, an electrode C3, and a pixel definitionlayer PDL3.

In the present embodiment, the electrode A3 is electrically connected tothe drain D3 of the third active element T3 through a contact window H12formed in the interlayer insulating layer IL8 and the planarizationlayer PL3. In this embodiment, the material of the electrode A3 may be atransparent conductive material or an opaque conductive material. Thetransparent conductive material may include a metal oxide conductivematerial such as indium tin oxide, indium zinc oxide, aluminum tinoxide, aluminum zinc oxide, indium gallium zinc oxide, other suitableoxides, or stacked layers of at least two of the above materials. Theopaque conductive material may include a metallic material such asaluminum, magnesium, titanium or alloys thereof.

In the present embodiment, the third light-emitting layer E3 is locatedwithin a opening V3 of the pixel definition layer PDL3, but the presentinvention is not limited thereto. In other embodiments, the thirdlight-emitting layer E3 may be located within the opening V3 of thepixel definition layer PDL3 and on the pixel definition layer PDL3. Inthe present embodiment, the color of the third light-emitting layer E3is a red color. In the present embodiment, the third light-emittinglayer E3 may be composed of any material known to those skilled in theart for the light-emitting layer in the display panel.

In the present embodiment, the electrode C3 is disposed on the thirdlight-emitting layer E3. In the present embodiment, the thirdlight-emitting layer E3 is disposed between the electrode A3 and theelectrode C3. In this embodiment, the material of the electrode C3 maybe a transparent conductive material or an opaque conductive material.The transparent conductive material may include a metal oxide conductivematerial such as indium tin oxide, indium zinc oxide, aluminum tinoxide, aluminum zinc oxide, indium antimony zinc oxide, other suitableoxides, or stacked layers of at least two of the above materials. Theopaque conductive material may include a metallic material such asaluminum, magnesium, titanium or alloys thereof.

In the present embodiment, the third light-emitting layer E3, theportion of the electrode A3 overlapping with the third light-emittinglayer E3, and the portion of the electrode C3 overlapping with the thirdlight-emitting layer E3 constitute the third light-emitting element O3.In the present embodiment, the portion of the electrode A3 overlappingwith the third light-emitting layer E3 serves as an anode of the thirdlight-emitting element O3, and the portion of the electrode C3overlapping with the third light-emitting layer E3 serves as a cathodeof the third light-emitting element O3, but the present invention is notlimited thereto. In other embodiments, the portion of the electrode A3overlapping with the third light-emitting layer E3 may serve as acathode of the third light-emitting element O3, and the portion of theelectrode C3 overlapping with the third light-emitting layer E3 mayserve as an anode of the third light-emitting element O3.

As described above, in the present embodiment, the electrode A3 iselectrically connected to the drain D3 of the third active element T3,so that the third active element T3 is electrically connected to thethird light-emitting element O3 for driving the third light-emittingelement O3. Specifically, the third light-emitting element O3 emitslight by driving the third light-emitting layer E3 through the voltagedifference generated between the electrode A3 and the electrode C3. Asdescribed above, the color of the third light-emitting layer E3 is thered color, so that the third light-emitting element O3 is driven to emita red light I3.

In addition, although FIG. 1 only shows one third active element T3electrically connected to the third light-emitting element O3, it shouldbe understood by those of ordinary skill in the art that the thirdlight-emitting element O3 is actually driven by, for example, a drivingunit having a 1T1C architecture, a 2T1C architecture, a 3T1Carchitecture, a 3T2C architecture, a 4T1C architecture, a 4T2Carchitecture, a 5T1C architecture, a 5T2C architecture, a 6T1Carchitecture, a 6T2C architecture, a 7T2C architecture or any possiblearchitecture. That is, in the present embodiment, the third activeelement T3 is one element in the driving unit for driving the thirdlight-emitting element O3.

In the present embodiment, the material of the pixel definition layerPDL3 may include a photosensitive polyimide material, a propylene-basedmaterial, a siloxane material, a phenolic resin material, an oxide, anitride or an oxynitride, but the present invention is not limitedthereto.

In the present embodiment, the adhesive layer 140 c is disposed betweenthe second light-emitting element layer 114 and the third substrate 120.That is, in the present embodiment, the third substrate 120 is adheredand fixed to the second light-emitting element layer 114 through theadhesive layer 140 c. In addition, in the embodiment, the adhesive layer140 c may be a continuous adhesive layer, wherein the material of theadhesive layer may include, but not limited to, a photo-curableadhesive, an optical clear adhesive or other adhesive materials.

It should be noted that, in this embodiment, the display device 10includes the first substrate 100, the first element layer 102, the firstlight-emitting element layer 104, the second substrate 110, the secondelement layer 112, the second light-emitting element layer 114, thethird substrate 120, the third element layer 122, and the thirdlight-emitting element layer 124 which are sequentially stacked, whereinthe first element layer 102 includes the first active element T1, thefirst light-emitting element layer 104 includes the first light-emittingelement O1 electrically connected to the first active element T1 andincluding the first light-emitting layer E1, the second element layer112 includes the second active element T2, the second light-emittingelement layer 114 includes the second light-emitting element O2electrically connected to the second active element T2 and including thelight-emitting layer E2, the third element layer 122 includes the thirdactive element T3, the third light-emitting element layer 124 includesthe third light-emitting element O3 electrically connected to the thirdactive element T3 and including the third light-emitting layer E3, andin the normal direction N of the first substrate 100, the firstlight-emitting layer E1, the second light-emitting layer E2 and thethird light-emitting layer E3 do not overlap with each other, wherebythe display device 10 may have improved resolution.

In addition, the display device 10 includes the fourth light-emittingelement O4 electrically connected to the fourth active element T4,wherein the chromaticity of the second blue color of the fourthlight-emitting layer E4 included in the fourth light-emitting element O4is different from the chromaticity of the first blue color of the firstlight-emitting layer E1, so that the display device 10 can be driven bya time division technique, thereby extending the lifetime of the displaydevice 10. Hereinafter, the driving method of the display device 10 willbe described with further reference to FIG. 2.

Referring to both of FIG. 2 and FIG. 1, during a frame time t1, aturn-on signal is input respectively to the first active element T1, thesecond active element T2, and the third active element T3, so that thefirst light-emitting element O1, the second light-emitting element O2and the third light-emitting element O3 are respectively driven to emitthe first blue light I1, the green light I2, and the red light I3 viathe turned-on first active element T1, the turned-on second activeelement T2, and the turned-on third active element T3. At this time, thefourth active element T4 is not turned on, and the first blue light I1,the green light I2, and the red light I3 are mixed to form a whitelight. During a frame time t2, a turn-on signal is input respectively tothe fourth active element T4, the second active element T2, and thethird active element T3, so that the fourth light-emitting element O4,the second light-emitting element O2, and the third light-emittingelement O3 are respectively driven to emit the second blue light I4, thegreen light I2, and the red light I3 via the turned-on fourth activeelement T4, the turned-on second active element T2, and the turned-onthird active element T3. At this time, the first active element T1 isnot turned on, and the second blue light I4, the green light I2, and thered light I3 are mixed to form a white light. As a result, although thefirst light-emitting layer E1 and the fourth light-emitting layer E4(i.e. the first blue light-emitting layer and the second bluelight-emitting layer) have a problem of limited lifetime due to materialproperties, the display device 10 includes both of the firstlight-emitting layer E1 and the fourth light-emitting layer E4, so whenthe display device 10 is driven by the time division technique, thelifetime of the display device 10 may be effectively extended.

In addition, in the display device 10, the color of the firstlight-emitting layer E1 is the first blue color, the color of the fourthlight-emitting layer E4 is the second blue color, the color of thesecond light-emitting layer E2 is the green color, and the color of thethird light-emitting layer E3 is the red color, and since the energy ofthe blue wavelength light is the strongest, the light transmittance ofthe display device 10 is optimized by placing the light-emitting layerwhich would emit the blue wavelength light (i.e. the firstlight-emitting layer E1 and the fourth light-emitting layer E4) at thelower location. However, the present invention is not limited thereto.In other embodiments, the arrangements of the color of the firstlight-emitting layer E1, the color of the fourth light-emitting layerE4, the color of the second light-emitting layer E2, and the color ofthe third light-emitting layer E3 may be implemented by otherarrangements of the first blue color, the second blue color, the greencolor and the red color.

In addition, in the display device 10, the fourth light-emitting elementO4 includes the fourth light-emitting layer E4, the portion of theelectrode A4 overlapping with the fourth light-emitting layer E4, andthe portion of the electrode C4 overlapping with the fourthlight-emitting layer E4, wherein the chromaticity of the color of thefourth light-emitting layer E4 is different from the chromaticity of thecolor of the first light-emitting layer E1, but the present invention isnot limited thereto. In other embodiments, the color of the firstlight-emitting layer E1 may be the same as the color of the fourthlight-emitting layer E4. Hereinafter, other embodiments will bedescribed with reference to FIG. 3. It should be mentioned here that,the embodiments below adopt the reference numerals of the embodimentsabove and a portion of the content thereof, wherein the same or similarreference numerals are used to represent the same or similar elementsand descriptions of the same technical content are omitted. The omittedportions are described in the previous embodiments and are not repeatedin the following embodiments.

FIG. 3 is a schematic cross-sectional view of a display device inaccordance with another embodiment of the present invention. Referringto both FIG. 3 and FIG. 1, the display device 20 of FIG. 3 is similar tothe display device 10 of FIG. 1, and the main difference is that in thedisplay device 20, the fourth light-emitting element O4 includes afourth light-emitting layer E4′ the portion of the electrode A4overlapping with the fourth light-emitting layer E4′ and the portion ofthe electrode C4 overlapping with the fourth light-emitting layer E4′.The differences between the display device 20 of FIG. 3 and the displaydevice 10 of FIG. 1 will be described below, and the same or similarelements are denoted by the same or similar reference numerals, and thedescriptions of the same technical content are omitted. The omittedportions are described in the previous embodiments and are not repeatedin the following embodiments.

Referring to FIG. 3, in the present embodiment, the color of the fourthlight-emitting layer E4′ is the first blue color. That is, in thepresent embodiment, the color of the fourth light-emitting layer E4′ isthe same as the color of the first light-emitting layer E1, and thecolor of the fourth light-emitting layer E4′ is different from the colorof the second light-emitting layer E2 and the color of the thirdlight-emitting layer E3. Moreover, since the color of the fourthlight-emitting layer E4′ is the first blue color, the fourthlight-emitting element O4 is driven by the fourth driving element T4 toemit a first blue light I4′, wherein the first blue light I1 emitted bythe first light-emitting element O1 is the same as the first blue lightI4′.

Although the first light-emitting layer E1 and the fourth light-emittinglayer E4′ (i.e. the blue light-emitting layer) have a problem of limitedlifetime due to material properties, the display device 20 includes bothof the first light-emitting layer E1 and the fourth light-emittinglayers E4′, so when the display device 20 is driven by the time divisiontechnique, the lifetime of the display device 20 may be effectivelyextended.

In the display device 20, the color of the first light-emitting layer E1is the first blue color, the color of the fourth light-emitting layerE4′ is the first blue color, the color of the second light-emittinglayer E2 is the green color, and the color of the third light-emittinglayer E3 is the red color, and since the energy of the blue wavelengthlight is the strongest, the light transmittance of the display device 20is optimized by placing the light-emitting layer which would emit theblue wavelength light (i.e. the first light-emitting layer E1 and thefourth light-emitting layer E4′) at the lower location. However, thepresent invention is not limited thereto. In other embodiments, thearrangements of the color of the first light-emitting layer E1, thecolor of the fourth light-emitting layer E4′, the color of the secondlight-emitting layer E2, and the color of the third light-emitting layerE3 may be implemented by other arrangements of the first blue color, thefirst blue color, the green color and the red color. For the rest,please refer to the foregoing embodiments, and details are not describedherein.

In addition, the display device 10 includes four light-emittingelements, i.e. the first light-emitting element O1, the secondlight-emitting element O2, the third light-emitting element O3 and thefourth light-emitting element O4, but the present invention is notlimited thereto. Hereinafter, other embodiments will be described withreference to FIG. 4 and FIGS. 6 to 9. It should be mentioned here that,the embodiments below adopt the reference numerals of the embodimentsabove and a portion of the content thereof, wherein the same or similarreference numerals are used to represent the same or similar elementsand descriptions of the same technical content are omitted. The omittedportions are described in the previous embodiments and are not repeatedin the following embodiments.

FIG. 4 is a schematic cross-sectional view of a display device inaccordance with another embodiment of the present invention. FIG. 5 is aschematic diagram of driving waveforms of the display device of FIG. 4.Referring to both FIG. 4 and FIG. 1, the display device 30 of FIG. 4 issimilar to the display device 10 of FIG. 1, and the main difference isthat the display device 30 includes six light-emitting elements, i.e.the first light-emitting element O1, the second light-emitting elementO2, the third light-emitting element O3, a fourth light-emitting elementO5, a fifth light-emitting element O6, and a sixth light-emittingelement O7. The differences between the display device 30 of FIG. 4 andthe display device 10 of FIG. 1 will be described below, and the same orsimilar elements are denoted by the same or similar reference numerals,and the descriptions of the same technical content are omitted. Theomitted portions are described in the previous embodiments and are notrepeated in the following embodiments.

Referring to FIG. 4, in the embodiment, the first element layer 102 mayinclude a fourth active element T5. In this embodiment, the fourthactive element T5 may include a semiconductor layer SC5, a gate G5, asource S5, and a drain D5. The semiconductor layer SC5 may include asource region SR5, a drain region DR5, and a channel region CR5. Thegate G5 is located above the channel region CR5 and overlaps the channelregion CR5. The source S5 is electrically connected to the source regionSR5 via a contact window H13 formed in the gate insulating layer GI andthe interlayer insulating layer IL1 and the drain D5 is electricallyconnected to the drain region DR5 via a contact window H14 formed in thegate insulating layer GI and the interlayer insulating layer IL1.

In the present embodiment, the fourth active element T5 belongs to thetop gate type thin film transistor, but the present invention is notlimited thereto. In other embodiments, the fourth active element T5 maybelong to the bottom gate type thin film transistor.

In the present embodiment, the material of the gate G5, the source S5,and the drain D5 may include, but not limited to, metal, an alloy, anitride of the foregoing material, an oxide of the foregoing material,an oxynitride of the foregoing material, other non-metallic materialswith conductive properties, or other suitable materials. In thisembodiment, the material of the semiconductor layer SC5 may includepolysilicon, that is, the fourth active element T5 may be a lowtemperature poly-silicon thin film transistor. However, the inventiondoes not limit the type of active elements. In other embodiments, thematerial of the semiconductor layer SC5 may include amorphous silicon,microcrystalline silicon, nanocrystalline silicon, single crystalsilicon, organic semiconductor material, metal oxide semiconductormaterial, carbon nanotube/rod, perovskite or other suitable materials.In the present embodiment, the gate insulating layer GI covers thesemiconductor layer SC5. In the present embodiment, the interlayerinsulating layer IL1 covers the gate G5. In the present embodiment, theinterlayer insulating layer IL2 covers the fourth active element T5.

In the present embodiment, the first light-emitting element layer 104may include an electrode A5 and a fourth light-emitting layer E5. In thepresent embodiment, the electrode A5 is electrically connected to thedrain D5 of the fourth active element T5 through a contact window H15formed in the interlayer insulating layer IL2 and the planarizationlayer PL. In this embodiment, the material of the electrode A5 may be atransparent conductive material or an opaque conductive material. Thetransparent conductive material may include a metal oxide conductivematerial such as indium tin oxide, indium zinc oxide, aluminum tinoxide, aluminum zinc oxide, indium gallium zinc oxide, other suitableoxides, or stacked layers of at least two of the above materials. Theopaque conductive material may include a metallic material such asaluminum, magnesium, titanium or alloys thereof.

In the present embodiment, the fourth light-emitting layer E5 is locatedwithin a opening V5 of the pixel definition layer PDL1, but the presentinvention is not limited thereto. In other embodiments, the fourthlight-emitting layer E5 may be located within the opening V5 of thepixel definition layer PDL1 and on the pixel definition layer PDL1. Inthe present embodiment, the color of the fourth light-emitting layer E5is a magenta color. In the present embodiment, the fourth light-emittinglayer E5 may be composed of any material known in the art for alight-emitting layer in a display panel. Further, in the presentembodiment, the fourth light-emitting layer E5 is disposed between theelectrode A5 and the electrode C1.

In the present embodiment, the fourth light-emitting layer E5, theportion of the electrode A5 overlapping with the fourth light-emittinglayer E5, and the portion of the electrode C1 overlapping with thefourth light-emitting layer constitute the fourth light-emitting elementO5. In the present embodiment, the portion of the electrode A5overlapping with the fourth light-emitting layer E5 serves as an anodeof the fourth light-emitting element O5, and the portion of theelectrode C1 overlapping with the fourth light-emitting layer E5 servesas a cathode of the fourth light-emitting element O5, but the presentinvention is not limited thereto. In other embodiments, the portion ofthe electrode A5 overlapping with the fourth light-emitting layer E5 mayserve as a cathode of the fourth light-emitting element O5, and theportion of the electrode C1 overlapping with the fourth light-emittinglayer E5 may serve as an anode of the fourth light-emitting element O5.

As described above, in the present embodiment, the electrode A5 iselectrically connected to the drain D5 of the fourth active element T5,so that the fourth active element T5 is electrically connected to thefourth light-emitting element O5 for driving the fourth light-emittingelement O5. Specifically, the fourth light-emitting element O5 emitslight by driving the fourth light-emitting layer E5 through the voltagedifference generated between the electrode A5 and the electrode C1. Asdescribed above, the color of the fourth light-emitting layer E5 is themagenta color, so that the fourth light-emitting element O5 is driven toemit a magenta light I5.

In addition, although FIG. 4 only shows one fourth active element T5electrically connected to the fourth light-emitting element O5, itshould be understood by those of ordinary skill in the art that thefourth light-emitting element O5 is actually driven by, for example, adriving unit having a 1T1C architecture, a 2T1C architecture, a 3T1Carchitecture, a 3T2C architecture, a 4T1C architecture, a 4T2Carchitecture, a 5T1C architecture, a 5T2C architecture, a 6T1Carchitecture, a 6T2C architecture, a 7T2C architecture or any possiblearchitecture. That is, in the present embodiment, the fourth activeelement T5 is one element in the driving unit for driving the fourthlight-emitting element O5.

In the present embodiment, the second element layer 112 may include afifth active element T6. In this embodiment, the fifth active element T6may include a semiconductor layer SC6, a gate G6, a source S6, and adrain D6. The semiconductor layer SC6 may include a source region SR6, adrain region DR6, and a channel region CR6. The gate G6 is located abovethe channel region CR6 and overlaps the channel region CR6, and thesource S6 is electrically connected to the source region SR6 via acontact window H16 formed in the gate insulating layer GI2 and theinterlayer insulating layer IL5, and the drain D6 is electricallyconnected to the drain region DR6 via a contact window H17 formed in thegate insulating layer GI2 and the interlayer insulating layer IL5.

In the present embodiment, the fifth active element T6 belongs to thetop gate type thin film transistor, but the present invention is notlimited thereto. In other embodiments, the fifth active element T6 maybelong to the bottom gate type thin film transistor.

In the present embodiment, the material of the gate G6, the source S6,and the drain D6 may include, but not limited to, metal, an alloy, anitride of the foregoing material, an oxide of the foregoing material,an oxynitride of the foregoing material, other non-metallic materialswith conductive properties, or other suitable materials. In thisembodiment, the material of the semiconductor layer SC6 may includepolysilicon, that is, the fifth active element T6 may be a lowtemperature poly-silicon thin film transistor. However, the inventiondoes not limit the type of active elements. In other embodiments, thematerial of the semiconductor layer SC6 may include amorphous silicon,microcrystalline silicon, nanocrystalline silicon, single crystalsilicon, organic semiconductor material, metal oxide semiconductormaterial, carbon nanotube/rod, perovskite or other suitable materials.In the present embodiment, the gate insulating layer GI2 covers thesemiconductor layer SC6. In the present embodiment, the interlayerinsulating layer IL5 covers the gate G6. In the present embodiment, theinterlayer insulating layer IL6 covers the fifth active element T6.

In the present embodiment, the second light-emitting element layer 114may include an electrode A6 and a fifth light-emitting layer E6. In thepresent embodiment, the electrode A6 is electrically connected to thedrain D6 of the fifth active element T6 through a contact window H18formed in the interlayer insulating layer IL6 and the planarizationlayer PL2. In this embodiment, the material of the electrode A6 may be atransparent conductive material or an opaque conductive material. Thetransparent conductive material may include a metal oxide conductivematerial such as indium tin oxide, indium zinc oxide, aluminum tinoxide, aluminum zinc oxide, indium gallium zinc oxide, other suitableoxides, or stacked layers of at least two of the above materials. Theopaque conductive material may include a metallic material such asaluminum, magnesium, titanium or alloys thereof.

In the present embodiment, the fifth light-emitting layer E6 is locatedwithin a opening V6 of the pixel definition layer PDL2, but the presentinvention is not limited thereto. In other embodiments, the fifthlight-emitting layer E6 may be located within the opening V6 of thepixel definition layer PDL2 and on the pixel definition layer PDL2. Inthe present embodiment, the color of the fifth light-emitting layer E6is a cyan color. In the present embodiment, the fifth light-emittinglayer E6 may be composed of any material known to those skilled in theart for the light-emitting layer in the display panel. Further, in thepresent embodiment, the fifth light-emitting layer E6 is disposedbetween the electrode A6 and the electrode C2.

In the present embodiment, the fifth light-emitting layer E6, theportion of the electrode A6 overlapping with the fifth light-emittinglayer E6, and the portion of the electrode C2 overlapping with the fifthlight-emitting layer E6 constitute the fifth light-emitting element O6.In the present embodiment, the portion of the electrode A6 overlappingwith the fifth light-emitting layer E6 serves as an anode of the fifthlight-emitting element O6, and the portion of the electrode C2overlapping with the fifth light-emitting layer E6 serves as a cathodeof the fifth light-emitting element O6, but the present invention is notlimited thereto. In other embodiments, the portion of the electrode A5overlapping with the fifth light-emitting layer E6 may serve as acathode of the fifth light-emitting element O6, and the portion of theelectrode C2 overlapping with the fifth light-emitting layer E6 mayserve as an anode of the fifth light-emitting element O6.

As described above, in the present embodiment, the electrode A6 iselectrically connected to the drain D6 of the fifth active element T6,so that the fifth active element T6 is electrically connected to thefifth light-emitting element O6 for driving the fifth light-emittingelement O6. Specifically, the fifth light-emitting element O6 emitslight by driving the fifth light-emitting layer E6 through the voltagedifference generated between the electrode A6 and the electrode C2. Asdescribed above, the color of the fifth light-emitting layer E6 is thecyan color, so that the fifth light-emitting element O6 is driven toemit a cyan light I6.

In addition, although FIG. 4 only shows one fifth active element T6electrically connected to the fifth light-emitting element O6, it shouldbe understood by those of ordinary skill in the art that the fifthactive element T6 is actually driven by, for example, a driving unithaving a 1T1C architecture, a 2T1C architecture, a 3T1C architecture, a3T2C architecture, a 4T1C architecture, a 4T2C architecture, a 5T1Carchitecture, a 5T2C architecture, a 6T1C architecture, a 6T2Carchitecture, a 7T2C architecture or any possible architecture. That is,in the present embodiment, the fifth active element T6 is one element inthe driving unit for driving the fifth light-emitting element O6.

In the present embodiment, the third element layer 122 may include asixth active element T7. In this embodiment, the sixth active element T7may include a semiconductor layer SC7, a gate G7, a source S7, and adrain D7, wherein the semiconductor layer SC7 may include a sourceregion SR7, a drain region DR7, and a channel region CR7. The gate G7 islocated above the channel region CR7 and overlaps the channel regionCR7, and the source S7 is electrically connected to the source regionSR7 via a contact window H19 formed in the gate insulating layer GI3 andthe interlayer insulating layer IL7, and the drain D7 is electricallyconnected to the drain region DR7 via a contact window H20 formed in thegate insulating layer GI3 and the interlayer insulating layer IL7.

In the present embodiment, the sixth active element T7 belongs to thetop gate type thin film transistor, but the present invention is notlimited thereto. In other embodiments, the sixth active element T7 maybelong to the bottom gate type thin film transistor.

In the present embodiment, the material of the gate G7, the source S7,and the drain D7 may include, but not limited to, metal, an alloy, anitride of the foregoing material, an oxide of the foregoing material,an oxynitride of the foregoing material, other non-metallic materialswith conductive properties, or other suitable materials. In thisembodiment, the material of the semiconductor layer SC7 may includepolysilicon, that is, the sixth active element T7 may be a lowtemperature poly-silicon thin film transistor. However, the inventiondoes not limit the type of active elements. In other embodiments, thematerial of the semiconductor layer SC7 may include amorphous silicon,microcrystalline silicon, nanocrystalline silicon, single crystalsilicon, organic semiconductor material, metal oxide semiconductormaterial, carbon nanotube/rod, perovskite or other suitable materials.In the present embodiment, the gate insulating layer GI3 covers thesemiconductor layer SC7. In the present embodiment, the interlayerinsulating layer IL7 covers the gate G7. In the present embodiment, theinterlayer insulating layer IL8 covers the sixth active element T7.

In the present embodiment, the third light-emitting element layer 124may include an electrode A7 and a sixth light-emitting layer E7. In thepresent embodiment, the electrode A7 is electrically connected to thedrain D7 of the sixth active element T7 through a contact window H21formed in the interlayer insulating layer IL8 and the planarizationlayer PL3. In this embodiment, the material of the electrode A7 may be atransparent conductive material or an opaque conductive material. Thetransparent conductive material may include a metal oxide conductivematerial such as indium tin oxide, indium zinc oxide, aluminum tinoxide, aluminum zinc oxide, indium gallium zinc oxide, other suitableoxides, or stacked layers of at least two of the above materials. Theopaque conductive material may include a metallic material such asaluminum, magnesium, titanium or alloys thereof.

In the present embodiment, the sixth light-emitting layer E7 is locatedwithin a opening V7 of the pixel definition layer PDL3, but the presentinvention is not limited thereto. In other embodiments, the sixthlight-emitting layer E7 may be located within the opening V7 of thepixel definition layer PDL3 and on the pixel definition layer PDL3. Inthe present embodiment, the color of the sixth light-emitting layer E7is a yellow color. As described above, the color of the firstlight-emitting layer E1 is the blue color, the color of the secondlight-emitting layer E2 is the green color, the color of the thirdlight-emitting layer E3 is the red color, the color of the fourthlight-emitting layer E5 is the magenta color, and the color of the fifthlight-emitting layer E6 is the cyan color. Therefore, in the presentembodiment, the color of the first light-emitting layer E1, the color ofthe second light-emitting layer E2, the color of the thirdlight-emitting layer E3, the color of the fourth light-emitting layerE5, the color of the fifth light-emitting layer E6 and the color of thesixth light-emitting layer E7 are different from each other. In thepresent embodiment, the sixth light-emitting layer E7 may be composed ofany material known to those skilled in the art for the light-emittinglayer in the display panel.

In the present embodiment, in the normal direction N of the firstsubstrate 100, the first light-emitting layer E1, the secondlight-emitting layer E2, the third light-emitting layer E3, the fourthlight-emitting layer E5, the fifth light-emitting layer E6, and thesixth light-emitting layers E7 do not overlap with each other. Inaddition, in the present embodiment, the first light-emitting layer E1and the fourth light-emitting layer E5 are arranged side by side in thefirst light-emitting element layer 104, the second light-emitting layerE2 and the fifth light-emitting layer E6 are arranged side by side inthe second light-emitting element layer 114, and the thirdlight-emitting layer E3 and the sixth light-emitting layer E7 arearranged side by side in the third light-emitting element layer 124.

In the present embodiment, the sixth light-emitting layer E7 is disposedbetween the electrode A7 and the electrode C3. Further, in the presentembodiment, the sixth light-emitting layer E7, the portion of theelectrode A7 overlapping with the sixth light-emitting layer E7, and theportion of the electrode C3 overlapping with the sixth light-emittinglayer E7 constitute the sixth light-emitting element O7. In the presentembodiment, the portion of the electrode A7 overlapping with the sixthlight-emitting layer E7 serves as an anode of the sixth light-emittingelement O7, and the portion of the electrode C3 overlapping with thesixth light-emitting layer E7 serves as a cathode of the sixthlight-emitting element O7, but the present invention is not limitedthereto. In other embodiments, the portion of the electrode A7overlapping with the sixth light-emitting layer E7 may serve as acathode of the sixth light-emitting element O7, and the portion of theelectrode C3 overlapping with the sixth light-emitting layer E7 mayserve as an anode of the sixth light-emitting element O7.

As described above, in the present embodiment, the electrode A7 iselectrically connected to the drain D7 of the sixth active element T7,so that the sixth active element T7 is electrically connected to thesixth light-emitting element O7 for driving the sixth light-emittingelement O7. Specifically, the sixth light-emitting element O7 emitslight by driving the sixth light-emitting layer E7 through the voltagedifference generated between the electrode A7 and the electrode C3. Asdescribed above, the color of the sixth light-emitting layer E7 is theyellow color, so that the sixth light-emitting element O7 is driven toemit a yellow light I6.

In addition, although FIG. 4 only shows one sixth active element T7electrically connected to the sixth light-emitting element O7, it shouldbe understood by those of ordinary skill in the art that the sixthactive element T7 is actually driven by, for example, a driving unithaving a 1T1C architecture, a 2T1C architecture, a 3T1C architecture, a3T2C architecture, a 4T1C architecture, a 4T2C architecture, a 5T1Carchitecture, a 5T2C architecture, a 6T1C architecture, a 6T2Carchitecture, a 7T2C architecture or any possible architecture. That is,in the present embodiment, the sixth active element T7 is one element inthe driving unit for driving the sixth light-emitting element O7.

In the present embodiment, the display device 30 may include an adhesivelayer 140 d. In the present embodiment, the adhesive layer 140 d isdisposed between the first light-emitting element layer 104 and thesecond substrate 110. That is, in the present embodiment, the secondsubstrate 110 is adhered and fixed to the first light-emitting elementlayer 104 through the adhesive layer 140 d. In addition, in theembodiment, the adhesive layer 140 d may be a continuous adhesive layer,wherein the material of the adhesive layer may include, but not limitedto, a photo-curable adhesive, an optical clear adhesive or otheradhesive materials.

In the present embodiment, the display device 30 includes the firstlight-emitting layer E1, the second light-emitting layer E2, the thirdlight-emitting layer E3, the fourth light-emitting layer E5, the fifthlight-emitting layer E6 and the sixth light-emitting layer E7 which thecolors thereof respectively are the blue color, the green color, the redcolor, the magenta color, the cyan color, and the yellow color, therebythe effect of improving the wide color gamut is achieved.

In addition, in the display device 30, the colors of the firstlight-emitting layer E1 and the fourth light-emitting layer E5 includedin the first light-emitting element layer 104 respectively are the bluecolor and the magenta color, the colors of the second light-emittinglayer E2 and the fifth light-emitting layer E6 included in the secondlight-emitting element layer 114 are respectively the green color andthe cyan color, and the colors of the third light-emitting layer E3 andthe sixth light-emitting layer E7 included in the third light-emittingelement layer 124 are respectively the red color and the yellow color,and since the energy of the blue wavelength light is the strongest, thelight transmittance of the display device 30 is optimized by placing thelight-emitting layer which would emit the blue wavelength light (i.e.the first light-emitting layer E1) at the lower location. However, thepresent invention is not limited thereto. In other embodiments, thearrangements of the color of the first light-emitting layer E1, thecolor of the second light-emitting layer E2, the color of the thirdlight-emitting layer E3, the color of the fourth light-emitting layerE5, the color of the five light-emitting layers E6 and the color of thesixth light-emitting layer E7 may be implemented by other arrangementsof the blue color, the green color, the red color, the magenta color,the cyan color, and the yellow color.

In addition, the display device 30 includes the fourth light-emittingelement O5 electrically connected to the fourth active element T5, thefifth light-emitting element O6 electrically connected to the fifthactive element T6 and sixth light-emitting element O7 electricallyconnected to the sixth active element T7, wherein the fourthlight-emitting layer E5 included in the fourth light-emitting element O5is the magenta light-emitting layer, the fifth light-emitting layer E6included in the fifth light-emitting element O6 is the cyanlight-emitting layer, and the sixth light-emitting layer E7 included inthe sixth light-emitting element O7 is the yellow light-emitting layer,so that the display device 30 may be driven by the time divisiontechnique, thereby extending the lifetime of the display device 30.Hereinafter, the driving method of the display device 30 will bedescribed with further reference to FIG. 5.

Referring to both FIG. 5 and FIG. 4, during a the frame time t1, aturn-on signal is input respectively to the first active element T1, thesecond active element T2, and the third active element T3, so that thefirst light-emitting element O1, the second light-emitting element O2and the third light-emitting element O3 are respectively driven to emitthe blue light I1, the green light I2, and the red light I3 via theturned-on first active element T1, the turned-on second active elementT2, and the turned-on third active element T3. At this time, the fourthactive element T5, the fifth active element T6, and the sixth activeelement T7 are not turned on, and the blue light I1, the green light I2,and the red light I3 are mixed to form a white light. During a frametime t2, the turn-on signal is input respectively to the fourth activeelement T5, the fifth active element T6, and the sixth active elementT7, so that the fourth light-emitting element O5, the fifthlight-emitting element O6, and the sixth light-emitting element O7 arerespectively driven to emit the magenta light I5, the cyan I6, and theyellow light I7 via the turned-on fourth active element T5, theturned-on fifth active element T6, and the turned-on sixth activeelement T7. At this time, the first active element T1, the second activeelement T2, and the third active element T3 are not turned on, and themagenta light I5, the cyan I6, and the yellow light I7 are mixed to forma white light. In this way, even if the first light-emitting layer E1(i.e. the blue light-emitting layer) has a problem of limited lifetimedue to material properties, the display device 30 includes the fourthlight-emitting layer E5, the fifth light-emitting layer E6 and the sixthlight-emitting layer E7, so that when the display device 30 is driventhe time division technique, the lifetime of the display device 30 maybe effectively extended. For the rest, please refer to the foregoingembodiments, and details are not described herein.

In addition, in the display device 30, in the normal direction N of thefirst substrate 100, the first light-emitting layer E1, the secondlight-emitting layer E2, the third light-emitting layer E3, the fourthlight-emitting layer E5, the fifth light-emitting layer E6, and thesixth light-emitting layers E7 do not overlap with each other, but thepresent invention is not limited thereto. Hereinafter, other embodimentswill be described with reference to FIG. 6. It should be mentioned herethat, the embodiments below adopt the reference numerals of theembodiments above and a portion of the content thereof, wherein the sameor similar reference numerals are used to represent the same or similarelements and descriptions of the same technical content are omitted. Theomitted portions are described in the previous embodiments and are notrepeated in the following embodiments.

FIG. 6 is a schematic cross-sectional view of a display device inaccordance with another embodiment of the present invention. Referringto both FIG. 6 and FIG. 4, the display device 40 of FIG. 6 is similar tothe display device 30 of FIG. 4, and the main difference is that in thedisplay device 40, in the normal direction N of the first substrate 100,the first light-emitting layer E1 overlaps with the fourthlight-emitting layer E5, the second light-emitting layer E2 overlapswith the fifth light-emitting layer E6, and the third light-emittinglayer E3 overlaps with the sixth light-emitting layer E7. Thedifferences between the display device 40 of FIG. 6 and the displaydevice 30 of FIG. 4 will be described below, and the same or similarelements are denoted by the same or similar reference numerals, and thedescriptions of the same technical content are omitted. The omittedportions are described in the previous embodiments and are not repeatedin the following embodiments.

Referring to FIG. 6, in the display device 40, the first light-emittingelement layer 104 may include an insulating layer L1, an electrode C5,and a pixel definition layer PDL5. In the present embodiment, theinsulating layer L1 is located between the electrode C1 and theelectrode A5 to provide an insulating function. The insulating layer L1may be a single layer structure or a multi-layer structure, and thematerial may include an inorganic material, an organic material, orother suitable materials, wherein the inorganic material includes, forexample, but not limited to: silicon oxide, silicon nitride or siliconoxynitride; the organic material includes, for example, but not limitedto, polyimide resin, epoxy resin, or acrylic resin. In addition, in thepresent embodiment, the contact window H15 for electrically connectingthe electrode A5 to the drain D5 of the fourth active element T5 isformed in the interlayer insulating layer IL2, the planarization layerPL, the pixel definition layer PDL1, and the insulating layer L1.

In the present embodiment, the fourth light-emitting layer E5 is locatedwithin a opening V8 of the pixel definition layer PDL5, but the presentinvention is not limited thereto. In other embodiments, the fourthlight-emitting layer E5 may be located within the opening V8 of thepixel definition layer PDL5 and on the pixel definition layer PDL5. Inthe present embodiment, the opening V8 of the pixel definition layerPDL5 overlaps with the opening V1 of the pixel definition layer PDL1 inthe normal direction N of the first substrate 100. In the presentembodiment, the material of the pixel definition layer PDL5 may includea photosensitive polyimide material, a propylene-based material, asiloxane material, a phenolic resin material, an oxide, a nitride or anoxynitride, but the present invention is not limited thereto.

In the present embodiment, the electrode C5 is disposed on the fourthlight-emitting layer E5. In the present embodiment, the fourthlight-emitting layer E5 is disposed between the electrode A5 and theelectrode C5. In this embodiment, the material of the electrode C5 maybe a transparent conductive material or an opaque conductive material.The transparent conductive material may include a metal oxide conductivematerial such as indium tin oxide, indium zinc oxide, aluminum tinoxide, aluminum zinc oxide, indium antimony zinc oxide, other suitableoxides, or stacked layers of at least two of the above materials. Theopaque conductive material may include a metallic material such asaluminum, magnesium, titanium or alloys thereof.

In the present embodiment, the fourth light-emitting element O5 includesthe fourth light-emitting layer E5, the portion of the electrode A5overlapping with the fourth light-emitting layer E5, and the portion ofthe electrode C5 overlapping with the fourth light-emitting layer E5. Inthe present embodiment, the portion of the electrode A5 overlapping withthe fourth light-emitting layer E5 serves as an anode of the fourthlight-emitting element O5, and the portion of the electrode C5overlapping with the fourth light-emitting layer E5 serves as a cathodeof the fourth light-emitting element O5, but the present invention isnot limited thereto. In other embodiments, the portion of the electrodeA5 overlapping with the fourth light-emitting layer E5 may serve as acathode of the fourth light-emitting element O5, and the portion of theelectrode C5 overlapping with the fourth light-emitting layer E5 mayserve as an anode of the fourth light-emitting element O5. Further, inthe present embodiment, the fourth light-emitting element O5 emits lightby driving the fourth light-emitting layer E5 through the voltagedifference generated between the electrode A5 and the electrode C5.

In the display device 40, the second light-emitting element layer 114may include an insulating layer L2, an electrode C6, and a pixeldefinition layer PDL6. In the present embodiment, the insulating layerL2 is located between the electrode C2 and the electrode A6 to providean insulating function. The insulating layer L2 may be a single layerstructure or a multi-layer structure, and the material may include aninorganic material, an organic material, or other suitable materials,wherein the inorganic material includes, for example, but not limitedto: silicon oxide, silicon nitride or silicon oxynitride; the organicmaterial includes, for example, but not limited to, polyimide resin,epoxy resin, or acrylic resin. In the present embodiment, the contactwindow H18 for electrically connecting the electrode A6 and the drain D6of the fifth active element T6 is formed in the interlayer insulatinglayer IL6, the planarization layer PL2, the pixel definition layer PDL2,and the insulating layer L2.

In the present embodiment, the fifth light-emitting layer E6 is locatedwithin an opening V9 of the pixel definition layer PDL6, but the presentinvention is not limited thereto. In other embodiments, the fifthlight-emitting layer E6 may be located within the opening V9 of thepixel definition layer PDL6 and on the pixel definition layer PDL6. Inthe present embodiment, the opening V9 of the pixel definition layerPDL6 overlaps with the opening V2 of the pixel definition layer PDL2 inthe normal direction N of the first substrate 100. In the presentembodiment, the material of the pixel definition layer PDL6 may includea photosensitive polyimide material, a propylene-based material, asiloxane material, a phenolic resin material, an oxide, a nitride or anoxynitride, but the present invention is not limited thereto.

In the present embodiment, the electrode C6 is disposed on the fifthlight-emitting layer E6. In the present embodiment, the fifthlight-emitting layer E6 is disposed between the electrode A6 and theelectrode C6. In this embodiment, the material of the electrode C6 maybe a transparent conductive material or an opaque conductive material.The transparent conductive material may include a metal oxide conductivematerial such as indium tin oxide, indium zinc oxide, aluminum tinoxide, aluminum zinc oxide, indium antimony zinc oxide, other suitableoxides, or stacked layers of at least two of the above materials. Theopaque conductive material may include a metallic material such asaluminum, magnesium, titanium or alloys thereof.

In the present embodiment, the fifth light-emitting element O6 includesthe fifth light-emitting layer E6, the portion of the electrode A6overlapping with the fifth light-emitting layer E6, and the portion ofthe electrode C6 overlapping with the fifth light-emitting layer E6. Inthe present embodiment, the portion of the electrode A6 overlapping withthe fifth light-emitting layer E6 serves as an anode of the fifthlight-emitting element O6, and the portion of the electrode C6overlapping with the fifth light-emitting layer E6 serves as a cathodeof the fifth light-emitting element O6, but the present invention is notlimited thereto. In other embodiments, the portion of the electrode A6overlapping with the fifth light-emitting layer E6 may serve as acathode of the fifth light-emitting element O6, and the portion of theelectrode C6 overlapping with the fifth light-emitting layer E6 mayserve as an anode of the fifth light-emitting element O6. Further, inthe present embodiment, the fifth light-emitting element O6 emits lightby driving the fifth light-emitting layer E6 through the voltagedifference generated between the electrode A6 and the electrode C6.

In the display device 40, the third light-emitting element layer 124 mayinclude an insulating layer L3, an electrode C7, and a pixel definitionlayer PDL7. In the present embodiment, the insulating layer L3 islocated between the electrode C3 and the electrode A7 to provide aninsulating function. The insulating layer L3 may be a single layerstructure or a multi-layer structure, and the material may include aninorganic material, an organic material, or other suitable materials,wherein the inorganic material includes, for example, but not limitedto: silicon oxide, silicon nitride or silicon oxynitride; the organicmaterial includes, for example, but not limited to, polyimide resin,epoxy resin, or acrylic resin. In the present embodiment, the contactwindow 21 for electrically connecting the electrodes A7 and the drain D7of the sixth active element T7 is formed in the interlayer insulatinglayer IL8, the planarization layer PL3, the pixel definition layer PDL3,and the insulating layer L3.

In the present embodiment, the sixth light-emitting layer E7 is locatedwithin the opening V10 of the pixel definition layer PDL7, but thepresent invention is not limited thereto. In other embodiments, thesixth light-emitting layer E7 may be located within the opening V10 ofthe pixel definition layer PDL7 and on the pixel definition layer PDL7.In the present embodiment, the opening V10 of the pixel definition layerPDL7 overlaps with the opening V3 of the pixel definition layer PDL3 inthe normal direction N of the first substrate 100. In the presentembodiment, the material of the pixel definition layer PDL7 may includea photosensitive polyimide material, a propylene-based material, asiloxane material, a phenolic resin material, an oxide, a nitride or anoxynitride, but the present invention is not limited thereto.

In the present embodiment, the electrode C7 is disposed on the sixthlight-emitting layer E7. In the present embodiment, the sixthlight-emitting layer E7 is disposed between the electrode A7 and theelectrode C7. In this embodiment, the material of the electrode C7 maybe a transparent conductive material or an opaque conductive material.The transparent conductive material may include a metal oxide conductivematerial such as indium tin oxide, indium zinc oxide, aluminum tinoxide, aluminum zinc oxide, indium antimony zinc oxide, other suitableoxides, or stacked layers of at least two of the above materials. Theopaque conductive material may include a metallic material such asaluminum, magnesium, titanium or alloys thereof.

In the present embodiment, the sixth light-emitting element O7 includesthe sixth light-emitting layer E7, the portion of the electrode A7overlapping with the sixth light-emitting layer E7, and the portion ofthe electrode C7 overlapping with the sixth light-emitting layer E7. Inthe present embodiment, the portion of the electrode A7 overlapping withthe sixth light-emitting layer E7 serves as an anode of the sixthlight-emitting element O7, and the portion of the electrode C7overlapping with the sixth light-emitting layer E7 serves as a cathodeof the sixth light-emitting element O7, but the present invention is notlimited thereto. In other embodiments, the portion of the electrode A7overlapping with the sixth light-emitting layer E7 may serve as acathode of the sixth light-emitting element O7, and the portion of theelectrode C7 overlapping with the sixth light-emitting layer E7 mayserve as an anode of the sixth light-emitting element O7. Further, inthe present embodiment, the sixth light-emitting element O7 emits lightby driving the sixth light-emitting layer E7 through the voltagedifference generated between the electrode A7 and the electrode C7. Forthe rest, please refer to the foregoing embodiments, and details are notdescribed herein.

In addition, in the display device 30, the first light-emitting elementO1 and the fourth light-emitting element O5 both are disposed in thesame light-emitting element layer (i.e. the first light-emitting elementlayer 104), the second light-emitting element O2 and the fifthlight-emitting element O6 both are disposed in the same light-emittingelement layer (i.e. the second light-emitting element layer 114), thethird light-emitting element O3 and the sixth light-emitting element O7both are disposed in the same light-emitting element layer (i.e. thethird light-emitting element layer 124), but the present invention isnot limited thereto. Hereinafter, other embodiments will be describedwith reference to FIG. 7. It should be mentioned here that, theembodiments below adopt the reference numerals of the embodiments aboveand a portion of the content thereof, wherein the same or similarreference numerals are used to represent the same or similar elementsand descriptions of the same technical content are omitted. The omittedportions are described in the previous embodiments and are not repeatedin the following embodiments.

FIG. 7 is a schematic cross-sectional view of a display device inaccordance with another embodiment of the present invention. Referringto both FIG. 7 and FIG. 6, the display device 50 of FIG. 7 is similar tothe display device 40 of FIG. 6, and the main difference is that in thedisplay device 50, the first light-emitting element O1, the fifthlight-emitting element O6, the second light-emitting element O2, thesixth light-emitting element O7, the fourth light-emitting element O5,and the third light-emitting element O3 are respectively disposed in thecorresponding light-emitting element layers (i.e. the firstlight-emitting element layer 104, the fifth light-emitting element layer164, the second light-emitting element layer 114, the sixthlight-emitting element layer 174, the fourth light-emitting elementlayer 154, and the third light-emitting element layer 124). Thedifferences between the display device 50 of FIG. 7 and the displaydevice 40 of FIG. 6 will be described below, and the same or similarelements are denoted by the same or similar reference numerals, and thedescriptions of the same technical content are omitted. The omittedportions are described in the previous embodiments and are not repeatedin the following embodiments.

Referring to FIG. 7, in the embodiment, the display device 50 mayinclude a fourth substrate 150, a fourth element layer 152, a fourthlight-emitting element layer 154, a fifth substrate 160, a fifth elementlayer 162, a fifth light-emitting element layer 164, a sixth substrate170, a sixth element layer 172, a sixth light-emitting element layer174, and adhesive layers 140 e-140 i.

In this embodiment, the materials of the fourth substrate 150, the fifthsubstrate 160, and the sixth substrate 170 may respectively include, butnot limited to, glass, quartz, silicon oxide, silicon nitride, siliconoxynitride or an organic polymer. The organic polymer includes, forexample, polyimide resin, epoxy resin, or acrylic resin. In the presentembodiment, each of the fourth substrate 150, the fifth substrate 160,and the sixth substrate 170 has a single layer structure, but thepresent invention is not limited thereto. In other embodiments, each ofthe fourth substrate 150, the fifth substrate 160, and the sixthsubstrate 170 may have a multilayer structure.

In the present embodiment, the fifth substrate 160 is disposed on thefirst light-emitting element layer 104. That is, in the presentembodiment, the fifth substrate 160 is stacked on the first substrate100, the first element layer 102, and the first light-emitting elementlayer 104 in the normal direction N of the first substrate 100. In thepresent embodiment, the fifth element layer 162 is disposed on the fifthsubstrate 160. In the present embodiment, the fifth element layer 162may include the fifth active element T6, a gate insulating layer GI6, aninterlayer insulating layer IL9, an interlayer insulating layer IL10,and a planarization layer PL6.

In the present embodiment, the contact window H16 for electricallyconnecting the source S6 of the fifth active element T6 to the sourceregion SR6 is formed in the gate insulating layer GI6 and the interlayerinsulating layer IL9, the contact window H17 for electrically connectingthe drain D6 of the fifth active element T6 to the drain region DR6 isformed in the gate insulating layer GI6 and the interlayer insulatinglayer IL9. In the present embodiment, the gate insulating layer GI6covers the semiconductor layer SC6. In the present embodiment, theinterlayer insulating layer IL9 is disposed on the gate insulating layerGI6 and covers the gate G6. In the present embodiment, the interlayerinsulating layer IL10 is disposed on the interlayer insulating layer IL9and covers the fifth active element T6 to provide insulation andprotection functions. In the present embodiment, the planarization layerPL6 is disposed on the interlayer insulating layer IL10 to provideprotection function and ensure planarization. In the present embodiment,the gate insulating layer GI6, the interlayer insulating layer IL9, theinterlayer insulating layer IL10, and the planarization layer PL6 mayeach have a single layer structure or a multilayer structure. In thepresent embodiment, the materials of the gate insulating layer GI6, theinterlayer insulating layer IL9, the interlayer insulating layer IL10,and the planarization layer PL6 may respectively include an inorganicmaterial, an organic material, or other suitable materials, wherein theinorganic material includes, for example, but not limited to: siliconoxide, silicon nitride or silicon oxynitride; the organic materialincludes, for example, but not limited to: polyimide resin, epoxy resinor acrylic resin.

In the present embodiment, the fifth light-emitting element layer 164 isdisposed on the fifth element layer 162. In the present embodiment, thefifth light-emitting element layer 164 may include the electrode A6, thefourth light-emitting layer E6, the electrode C6, and the pixeldefinition layer PDL6. In the present embodiment, the contact window H18for electrically connecting the electrode A6 to the drain D6 of thefifth active element T6 is formed in the interlayer insulating layerIL12 and the planarization layer PL6.

In the present embodiment, the adhesive layer 140 e is disposed betweenthe first light-emitting element layer 104 and the fifth substrate 160.That is, in the present embodiment, the fifth substrate 160 is adheredand fixed to the first light-emitting element layer 104 through theadhesive layer 140 e. In addition, in the embodiment, the adhesive layer140 e may be a continuous adhesive layer, wherein the material of theadhesive layer may include, but not limited to, a photo-curableadhesive, an optical clear adhesive or other adhesive materials.

In the present embodiment, the second substrate 110 is disposed on thefifth light-emitting element layer 164. That is, in the presentembodiment, the second substrate 110 is stacked on the first substrate100, the first element layer 102, the first light-emitting element layer104, the fifth substrate 160, the fifth element layer 162 and the fifthlight-emitting element layer 164 in the normal direction N of the firstsubstrate 100.

In the present embodiment, the adhesive layer 140 f is disposed betweenthe fifth light-emitting element layer 164 and the second substrate 110.That is, in the present embodiment, the second substrate 110 is adheredand fixed to the fifth light-emitting element layer 164 through theadhesive layer 140 f. In addition, in the embodiment, the adhesive layer140 f may be a continuous adhesive layer, wherein the material of theadhesive layer may include, but not limited to, a photo-curableadhesive, an optical clear adhesive or other adhesive materials.

In the present embodiment, the sixth substrate 170 is disposed on thesecond light-emitting element layer 114. That is, in the presentembodiment, the sixth substrate 170 is stacked on the first substrate100, the first element layer 102, the first light-emitting element layer104, the fifth substrate 160, the fifth element layer 162, the fifthlight-emitting element layer 164, the second substrate 110, the secondelement layer 112, and the second light-emitting element layer 114 inthe normal direction N of the first substrate 100. In the presentembodiment, the sixth element layer 172 is disposed on the sixthsubstrate 170. In the present embodiment, the sixth element layer 172may include the sixth active element T7, a gate insulating layer GI7, aninterlayer insulating layer IL11, an interlayer insulating layer IL12,and a planarization layer PL7.

In the present embodiment, the contact window H19 for electricallyconnecting the source S7 of the sixth active element T7 to the sourceregion SR7 is formed in the gate insulating layer GI7 and the interlayerinsulating layer IL11, the contact window H20 for electricallyconnecting the drain D7 of the sixth active element T7 to the drainregion DR7 is formed in the gate insulating layer GI7 and the interlayerinsulating layer IL11. In the present embodiment, the gate insulatinglayer GI7 covers the semiconductor layer SC7. In the present embodiment,the interlayer insulating layer IL11 is disposed on the gate insulatinglayer GI7 and covers the gate G7. In the present embodiment, theinterlayer insulating layer IL12 is disposed on the interlayerinsulating layer IL11 and covers the sixth active element T7 to provideinsulation and protection functions. In the present embodiment, theplanarization layer PL7 is disposed on the interlayer insulating layerIL12 to provide protection function and ensure planarization. In thepresent embodiment, the gate insulating layer GI7, the interlayerinsulating layer IL11, the interlayer insulating layer IL12, and theplanarization layer PL7 may each have a single layer structure or amultilayer structure. In the present embodiment, the materials of thegate insulating layer GI7, the interlayer insulating layer IL11, theinterlayer insulating layer IL12, and the planarization layer PL7 mayrespectively include an inorganic material, an organic material, orother suitable materials, wherein the inorganic material includes, forexample, but not limited to: silicon oxide, silicon nitride or siliconoxynitride; the organic material includes, for example, but not limitedto: polyimide resin, epoxy resin or acrylic resin.

In the present embodiment, the sixth light-emitting element layer 174 isdisposed on the sixth element layer 172. In the present embodiment, thesixth light-emitting element layer 174 may include the electrode A7, thesixth light-emitting layer E7, the electrode C7, and the pixeldefinition layer PDL7. In the present embodiment, the contact window H21for electrically connecting the electrode A7 to the drain D7 of thesixth active element T7 is formed in the interlayer insulating layerIL12 and the planarization layer PL7.

In the present embodiment, the adhesive layer 140 g is disposed betweenthe second light-emitting element layer 114 and the sixth substrate 170.That is, in the present embodiment, the sixth substrate 170 is adheredand fixed to the second light-emitting element layer 114 through theadhesive layer 140 g. In addition, in the embodiment, the adhesive layer140 g may be a continuous adhesive layer, wherein the material of theadhesive layer may include, but not limited to, a photo-curableadhesive, an optical clear adhesive or other adhesive materials.

In the present embodiment, the fourth substrate 150 is disposed on thesixth light-emitting element layer 174. That is, in the presentembodiment, the fourth substrate 150 is stacked on the first substrate100, the first element layer 102, the first light-emitting element layer104, the fifth substrate 160, the fifth element layer 162, the fifthlight-emitting element layer 164, the second substrate 110, the secondelement layer 112, the second light-emitting element layer 114, thesixth substrate 170, the sixth element layer 172, and the sixthlight-emitting element layer 174 in the normal direction N of the firstsubstrate 100. In the present embodiment, the fourth element layer 152is disposed on the fourth substrate 150. In the present embodiment, thefourth element layer 152 may include the fourth active element T5, agate insulating layer GI5, an interlayer insulating layer IL13, aninterlayer insulating layer IL14, and a planarization layer PL5.

In the present embodiment, the contact window H13 for electricallyconnecting the source S5 of the fourth active element T5 to the sourceregion SR5 is formed in the gate insulating layer GI5 and the interlayerinsulating layer IL13, the contact window H14 for electricallyconnecting the drain D5 of the element T5 to the drain region DR5 isformed in the gate insulating layer GI5 and the interlayer insulatinglayer IL13. In the present embodiment, the gate insulating layer GI5covers the semiconductor layer SC5. In the present embodiment, theinterlayer insulating layer IL13 is disposed on the gate insulatinglayer GI5 and covers the gate G5. In the present embodiment, theinterlayer insulating layer IL14 is disposed on the interlayerinsulating layer IL13 and covers the fourth active element T5 to provideinsulation and protection functions. In the present embodiment, theplanarization layer PL5 is disposed on the interlayer insulating layerIL14 to provide protection function and ensure planarization. In thepresent embodiment, the gate insulating layer GI5, the interlayerinsulating layer IL13, the interlayer insulating layer IL14, and theplanarization layer PL5 may each have a single layer structure or amultilayer structure. In the present embodiment, the materials of thegate insulating layer GI5, the interlayer insulating layer IL13, theinterlayer insulating layer IL14, and the planarization layer PL5 mayrespectively include an inorganic material, an organic material, orother suitable materials, wherein the inorganic material includes, forexample, but not limited to): silicon oxide, silicon nitride or siliconoxynitride; the organic material includes, for example, but not limitedto: polyimide resin, epoxy resin or acrylic resin.

In the present embodiment, the fourth light-emitting element layer 154is disposed on the fourth element layer 152. In the present embodiment,the fourth light-emitting element layer 154 may include the electrodeA5, the fourth light-emitting layer E5, the electrode C5, and the pixeldefinition layer PDL5. In the present embodiment, the contact window H15for electrically connecting the electrode A5 to the drain D5 of thefourth active element T5 is formed in the interlayer insulating layerIL14 and the planarization layer PL5.

In the present embodiment, the adhesive layer 140 h is disposed betweenthe sixth light-emitting element layer 174 and the fourth substrate 150.That is, in the present embodiment, the fourth substrate 150 is adheredand fixed to the sixth light-emitting element layer 174 through theadhesive layer 140 h. In addition, in the embodiment, the adhesive layer140 h may be a continuous adhesive layer, wherein the material of theadhesive layer may include, but not limited to, a photo-curableadhesive, an optical clear adhesive or other adhesive materials.

In the present embodiment, the third substrate 120 is disposed on thefourth light-emitting element layer 154. That is, in the presentembodiment, the third substrate 120 is stacked on the first substrate100, the first element layer 102, the first light-emitting element layer104, the fifth substrate 160, the fifth element layer 162, the fifthlight-emitting element layer 164, the second substrate 110, the secondelement layer 112, the second light-emitting element layer 114, thesixth substrate 170, the sixth element layer 172, the sixthlight-emitting element layer 174, the fourth substrate 150, the fourthelement layer 152, and the fourth light-emitting element layer 154 inthe normal direction N of the first substrate 100.

In the present embodiment, the adhesive layer 140 i is disposed betweenthe fourth light-emitting element layer 154 and the third substrate 120.That is, in the present embodiment, the third substrate 120 is adheredand fixed to the fourth light-emitting element layer 154 through theadhesive layer 140 i. In addition, in the embodiment, the adhesive layer140 i may be a continuous adhesive layer, wherein the material of theadhesive layer may include, but not limited to, a photo-curableadhesive, an optical clear adhesive or other adhesive materials.

In the display device 50, the colors of the first light-emitting layerE1, the fifth light-emitting layer E6, the second light-emitting layerE2, the sixth light-emitting layer E7, the fourth light-emitting layerE5 and the third light-emitting layer E3 sequentially disposed from thefirst substrate 100 from bottom to top are the blue color, the cyancolor, the green color, the yellow color, the magenta color, and the redcolor, respectively. Since the energy of the blue wavelength light isthe strongest, the light transmittance of the display device 50 isoptimized by placing the light-emitting layer which would emit the bluewavelength light (i.e. the first light-emitting layer E1) at the lowerlocation. However, the present invention is not limited thereto. Inother embodiments, the arrangements of the color of the firstlight-emitting layer E1, the color of the second light-emitting layerE2, the color of the third light-emitting layer E3, the color of thefourth light-emitting layer E5, the color of the five light-emittinglayers E6 and the color of the sixth light-emitting layer E7 may beimplemented by other arrangements of the blue color, the green color,the red color, the magenta color, the cyan color, and the yellow color.

In addition, in the display device 50, in the normal direction N of thefirst substrate 100, the first light-emitting layer E1, the secondlight-emitting layer E2, the third light-emitting layer E3, the fourthlight-emitting layer E5, the fifth light-emitting layer E6 and the sixthlight-emitting layers E7 do not overlap with each other. That is, in thepresent embodiment, in the normal direction N of the first substrate100, the opening V1 of the pixel definition layer PDL1, the opening V2of the pixel definition layer PDL2, the opening V3 of the pixeldefinition layer PDL3, the opening V8 of the prime defining layer PDL5,the opening V9 of the pixel definition layer PDL6 and the opening V10 ofthe pixel definition layer PDL7 do not overlap with each other. For therest, please refer to the foregoing embodiments, and details are notdescribed herein.

In addition, referring to FIG. 4, in the display device 30, the bluelight I1 and the magenta light I5 pass through the adhesive layer 140 d,the second substrate 110, the second element layer 112, the secondlight-emitting element layer 114, the adhesive layer 140 c, the thirdsubstrate 120, the third element layer 122, and the third light-emittingelement layer 124 after being emitted respectively from the firstlight-emitting element O1 and the fourth light-emitting element O5, thegreen light I2 and the cyan light I6 pass through the adhesive layer 140c, the third substrate 120, the third element layer 122, and the thirdlight-emitting element layer 124 after being emitted respectively fromthe second light-emitting element O2 and the fifth light-emittingelement O6, but the present invention is not limited thereto.Hereinafter, other embodiments will be described with reference to FIG.8. It should be mentioned here that, the embodiments below adopt thereference numerals of the embodiments above and a portion of the contentthereof, wherein the same or similar reference numerals are used torepresent the same or similar elements and descriptions of the sametechnical content are omitted. The omitted portions are described in theprevious embodiments and are not repeated in the following embodiments.

FIG. 8 is a schematic cross-sectional view of a display device inaccordance with another embodiment of the present invention. Referringto both FIG. 8 and FIG. 4, the display device 60 of FIG. 8 is similar tothe display device 30 of FIG. 4, and therefore the same or similarelements are denoted by the same or similar reference numerals, and thedescriptions of the same technical content are omitted. The omittedportions are described in the previous embodiments and are not repeatedin the following embodiments.

Referring to FIG. 8, in the embodiment, the second element layer 112 andthe second light-emitting element layer 114 have a plurality of firstopening patterns U1, and the third element layer 122 and the thirdlight-emitting element layer 124 have a plurality of second openingpattern U2. In detail, in the present embodiment, in the normaldirection N of the first substrate 100, the first light-emitting layerE1, the first opening pattern U1 and the second opening pattern U2overlap with each other, the fourth light-emitting layer E5, the firstopening pattern U1 and the second opening pattern U2 overlap with eachother, the second light-emitting layer E2 and the second opening patternU2 overlap with each other, and the fifth light-emitting layer E6 andthe second opening pattern U2 overlap with each other. In this manner,in the display device 60, the blue light I1 and the magenta light I5 donot pass through the second element layer 112, the second light-emittingelement layer 114, the third element layer 122 and the thirdlight-emitting element layer 124 after being emitted respectively fromthe first light-emitting element O1 and the fourth light-emittingelement O5, the green light I2 and the cyan light I6 do not pass throughthe third element layer 122 and the third light-emitting element layer124 after being emitted respectively from the second light-emittingelement O2 and the fifth light-emitting element O6. Thereby, the effectof improving the light transmittance may be achieved. In addition, inthe present embodiment, the first opening patterns U1 are disposed at aregion where elements and traces are not arranged in the second elementlayer 112 and the second light-emitting element layer 114, and thesecond opening patterns U2 are disposed at a region where elements andtraces are not arranged in the third element layer 122 and the thirdlight-emitting element layer 124.

In addition, when the display device 60 is a flexible display device,since the display device 60 includes the first opening patterns U1 andthe second opening patterns U2, the effect of improving flexibility maybe achieved.

It should be noted that, according to the foregoing descriptions of thedisplay device 60, any one of ordinary skill in the art shouldunderstand that the display device 10, the display device 20, thedisplay device 40, and the display device 50 can all be disposed theopening patterns to achieve the effect of improving light transmittanceand/or improving flexibility. For the rest, please refer to theforegoing embodiments, and details are not described herein.

Based on the above, in a display device according to at least oneembodiment of the present invention, the first element layer is disposedon the first substrate and includes a first active element, the firstlight-emitting element layer is disposed on the first element layer andincludes the first light-emitting element electrically connected to thefirst active element, the second substrate is disposed on the firstlight-emitting element, the second element layer is disposed on thesecond substrate and includes the second active element, the secondlight-emitting element layer is disposed on the second element layer andincludes the second light-emitting element electrically connected to thesecond active element, the third substrate is disposed on the secondlight-emitting element, the third element layer is disposed on the thirdsubstrate and includes the third active element, the thirdlight-emitting element is disposed on the third element layer andincludes the third light-emitting element electrically connected to thethird active element, and the first light-emitting layer of the firstlight-emitting element, the second light-emitting layer of the secondlight-emitting element, and the third light-emitting layer of the thirdlight-emitting element do not overlap with each other in the normaldirection of the first substrate, whereby the display device may haveimproved resolution.

The present invention has been disclosed in the above embodiments, andis not intended to limit the present invention. Any one of ordinaryskill in the art can make some changes and refinements without departingfrom the spirit and scope of the present invention. The scope of theinvention is defined by the scope of the appended claims.

What is claimed is:
 1. A display device, comprising: a first substrate;a first element layer disposed on the first substrate and including afirst active element; a first light-emitting element layer disposed onthe first element layer, wherein the first light-emitting element layerincludes a first light-emitting element, electrically connected to thefirst active element, and includes a first light-emitting layer; asecond substrate disposed on the first light-emitting element; a secondelement layer disposed on the second substrate and including a secondactive element; a second light-emitting element layer disposed on thesecond element layer, wherein the second light-emitting element layerincludes a second light-emitting element, electrically connected to thesecond active element, and includes a second light-emitting layer; athird substrate disposed on the second light-emitting element; a thirdelement layer disposed on the third substrate and including a thirdactive element; a third light-emitting element layer disposed on thethird element layer, wherein the third light-emitting element layerincludes a third light-emitting element, electrically connected to thethird active element, and includes a third light-emitting layer, whereinthe first light-emitting layer, the second light-emitting layer and thethird light-emitting layer do not overlap with each other in a normaldirection of the first substrate, wherein the first element layerfurther includes a fourth active element, the first light-emittingelement layer further includes a fourth light-emitting element, thefourth active element is electrically connected to the fourthlight-emitting element, and the fourth light-emitting element includes afourth light-emitting layer; the second element layer further includes afifth active element, the second light- emitting element layer furtherincludes a fifth light-emitting element, the fifth active element iselectrically connected to the fifth light-emitting element, and thefifth light- emitting element includes a fifth light-emitting layer; thethird element layer further includes a sixth active element; the thirdlight- emitting element layer further includes a sixth light-emittingelement, the sixth active element is electrically connected to the sixthlight-emitting element, and the sixth light-emitting element includes asixth light-emitting layer, wherein the first light-emitting layeroverlaps the fourth light-emitting layer, the second light-emittinglayer overlaps the fifth light-emitting layer, and the third light-emitting layer overlaps the sixth light-emitting layer in the normaldirection of the first substrate; and wherein a color of the firstlight- emitting layer is a blue color, a color of the secondlight-emitting layer is a green color, a color of the thirdlight-emitting layer is a red color, a color of the fourthlight-emitting layer is a magenta color, a color of the fifthlight-emitting layer is a cyan color, and a color of the sixthlight-emitting layer is a yellow color.
 2. The display device of claim1, wherein: when in a first time, the first light-emitting element isdriven to emit light by the turned-on first active element, the secondlight-emitting element is driven to emit light by the turned-on secondactive element, and the third light-emitting element is driven to emitlight by the turned-on third active element; and when in a second time,the third active element is turned off, the first light-emitting elementis driven to emit light by the turned-on first active element, thesecond light- emitting element is driven to emit light by the turned-onsecond active element, and the four light-emitting element is driven toemit light by the turned-on fourth active element.
 3. The display deviceof claim 1, wherein the first light-emitting layer, the secondlight-emitting layer, the third light-emitting layer, the fourthlight-emitting layer, the fifth light-emitting layer and the sixthlight-emitting layer do not overlap with each other in the normaldirection of the first substrate.
 4. The display device of claim 1,wherein: when in a first time, the first light-emitting element isdriven to emit light by the turned-on first active element, the secondlight-emitting element is driven to emit light by the turned-on secondactive element, and the third light-emitting element is driven to emitlight by the turned-on third active element; and when in a second time,the first active element, the second active element, and the thirdactive element are turned off, the fourth light-emitting element isdriven to emit light by the turned-on fourth active element, the fifthlight-emitting element is driven to emit light by the turned-on fifthactive element and the sixth light-emitting element is driven to emitlight by the turned-on sixth active element.
 5. The display device ofclaim 1, wherein the first light-emitting dement layer and the fourthlight-emitting element layer emit light at different times.
 6. A displaydevice, comprising: a first substrate; a first element layer disposed onthe first substrate and including a first active element; a firstlight-emitting element layer disposed on the first element layer,wherein the first light-emitting element layer includes a firstlight-emitting element, electrically connected to the first activeelement, and includes a first light-emitting layer; a second substratedisposed on the first light-emitting element; a second element layerdisposed on the second substrate and including a second active element;a second light-emitting element layer disposed on the second elementlayer, wherein the second light-emitting element layer includes a secondlight-emitting element, electrically connected to the second activeelement, and includes a second light-emitting layer; a third substratedisposed on the second light-emitting element; a third element layerdisposed on the third substrate and including a third active element; athird light-emitting element layer disposed on the third element layer,wherein the third light-emitting element layer includes a thirdlight-emitting element, electrically connected to the third activeelement, and includes a third light-emitting layer, wherein the firstlight-emitting layer, the second light-emitting layer and the thirdlight-emitting layer do not overlap with each other in a normaldirection of the first substrate; a fourth substrate; a fourth elementlayer disposed on the fourth substrate and including a fourth activeelement; a fourth light-emitting element layer disposed on the fourthelement layer, wherein the fourth light-emitting element layer includesa fourth light-emitting element, electrically connected to the fourthactive element, and including a fourth light-emitting layer; a fifthsubstrate; a fifth element layer disposed on the fifth substrate andincluding a fifth active element; a fifth light-emitting element layerdisposed on the fifth element layer, wherein the fifth light-emittingelement layer includes a fifth light-emitting element, electricallyconnected to the fifth active element and including a fifthlight-emitting layer; a sixth substrate disposed on the fifthlight-emitting element layer; a sixth element layer disposed on thesixth substrate and including a sixth active element; and a sixthlight-emitting element layer disposed on the sixth element layer,wherein the sixth light-emitting element layer includes a sixthlight-emitting element, electrically connected to the sixth activeelement, and including a sixth light-emitting layer, wherein the fifthsubstrate, the fifth element layer and the fifth light-emitting elementlayer are located between the first light-emitting element layer and thesecond substrate, the sixth substrate, the sixth element layer and thesixth light-emitting element layer are located between the secondlight-emitting element layer and the fourth substrate, and the fourthsubstrate, the fourth element layer and the fourth light-emittingelement layer are located between the sixth light-emitting element layerand the third substrate.
 7. The display device of claim 6, whereincolors of the first light-emitting layer, the second light-emittinglayer, the third light-emitting layer, the fourth light-emitting layer,the fifth light-emitting layer, and the sixth illuminating are differentfrom each other.
 8. The display device of claim 7, wherein a color ofthe first light-emitting layer is blue color, a color of the secondlight-emitting layer is a green color, a color of the thirdlight-emitting layer is a red color, a color of the fourthlight-emitting layer is a magenta color, a color of the fifthlight-emitting layer is a cyan color, and a color of the sixthlight-emitting layer is a yellow color.
 9. The display device of claim7, wherein the first light-emitting layer, the second light-emittinglayer, the third light-emitting layer, the fourth light-emitting layer,the fifth light-emitting layer and the sixth light-emitting layer do notoverlap with each other in the normal direction of the first substrate.10. The display device of claim 6, wherein: when in a first time, thefirst light-emitting element is driven to emit light by the turned-onfirst active element, the second light-emitting element is driven toemit light by the turned-on second active element, and the thirdlight-emitting element is driven to emit light by the turned-on thirdactive element; and when in a second time, the first active element, thesecond active element, and the third active element are turned off, thefourth light-emitting element is driven to emit light by the turned-onfourth active element, the fifth light-emitting element is driven toemit light by the turned-on fifth active element and the sixthlight-emitting element is driven to emit light by the turned-on sixthactive element.